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Excitation Power Dependence of Photoluminescence in CIB and FIB Implanted Superlattices

Published online by Cambridge University Press:  26 February 2011

A. G. Choo ,
H. E. Jackson ,
P. Chen ,
A. J. Steckl ,
V. Gupta  and
J. T. Boyd
A. G. Choo
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0011
H. E. Jackson
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0011
P. Chen
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0011
A. J. Steckl
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0011
V. Gupta
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0011
J. T. Boyd
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0011
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Abstract

Low temperature photoluminescence spectra have been used to characterize conventional ion beam (CIB) and focused ion beam (FIB) implanted superlattices. The excitation dependence of the single scan FIB is found to be significantly different from CIB and multiple scan FIB implantations which are similar. The peak position of the donor-acceptor transition is observed to change to higher energies significantly slower with excitation intensity for the single scan FIB case when compared to the multiple scan FIB and CIB cases. Simple models to describe these effects are briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 697
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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