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Excimer-Laser-Initiated, Dry Etching of Single Crystal GaAs
Published online by Cambridge University Press: 21 February 2011
Abstract
Gas-phase UV-initiated (193 nm) photodissociations of methyl (CH3) and trifluoromethyl (CF3) containing compounds have been investigated for the dry etching of single crystal GaAs substrates. Etching rates of greater than 1 μ/min. have been observed. Etching rates and surface profiles will be discussed in terms of crystal orientation, reactive etching fragments, and laser-surface interactions. Products of the etching reactions have been examined by UV absorption, mass spectrometry and laser-induced fluorescence techniques. Applications to large scale and micron dimension etching processes will be briefly discussed.
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