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Excimer Laser Induced Patterning of PSZT and PLZT Flms

Published online by Cambridge University Press:  01 February 2011

Patrick William Leech  and
Anthony S Holland
Patrick William Leech
Affiliation:
[email protected], Molecular and Health Technologies, CSIRO, Bayview Crescent,, Clayton, 3168, Australia, +613-95452791
Anthony S Holland
Affiliation:
[email protected], RMIT, School of Electrical and Computer Engineering, Melbourne, N/A, Australia
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Abstract

The patterning of strontium-doped lead zirconium titanate (PSZT) and lanthanum-doped lead zirconium titanate (PLZT) films has been examined using excimer laser radiation. Both types of film were deposited by rf magnetron sputtering using in-situ heating and a controlled cooling rate in order to obtain the perovskite-oriented phase. The depth of laser ablation in both PSZT and PLZT films showed a logarithmic dependence on fluence. The threshold fluence required to initiate ablation was ∼1.25 mJ/cm2 for PLZT and ∼1.87 mJ/cm2 for PSZT films. The ablation rate of PLZT films was slightly higher than that of PSZT films over the range of fluence (10-150 J/cm2) and increased linearly with number of pulses. The higher ablation rate of PLZT films has been attributed to the finer grainsize (160-200 nm) than in the PSZT films (1.0-1.2 µm).

Keywords

ablationlaser ablationferroelectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1052: Symposium DD – Microelectromechanical Systems–Materials and Devices , 2007 , 1052-DD06-03
Copyright
Copyright © Materials Research Society 2008

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References

1 Araujo, E.B. and Eiras, J.A., J.Phys.D:Appl.Phys. 36, 2010 (2003).Google Scholar
2 Sriram, S., M.Bhaskaran and Holland, A.S., Semicond. Sci.Technol. 21(9), 1236 (2006).Google Scholar
3 Kandasamy, S., Ghantasala, M., Holland, A., Li, Y.X., Bliznyuk, V., Wlodarski, W. and Mitchell, A., Materials Letters, In Press (2007).Google Scholar
4 Tunaboylu, B., Harvey, P. and Esener, S.C., Integr.Ferroelectr. 19, 11 (1998).Google Scholar
5 Baborowski, J., Journal of Electroceramics, 12 23 (2004).Google Scholar
6 Eyett, M., Bäuerle, D., Wersing, M. and Thomann, H., J.Appl.Phys. 62(4), 1511 (1987).Google Scholar
7 Konoshi, T., Ide, M., Tanaka, K. and Sugiyama, S., IEEJ Trans. SM, 126(7), 302 (2006).Google Scholar
8 Desbiens, J-P. and Masson, P., Sensors and Actuators, A 136 554 (2007).Google Scholar
9 Hammer, M. and Hoffmann, M., J.Am.Cer.Soc. 81(12) 3277 (1998),Google Scholar
10 Zeng, D.W., Li, K., Yung, K.C., Chan, H.L.W., Choy, C.L. and Xie, C.S., Appl.Phys., A78 415 (2004).Google Scholar
11 Chen, X.Y. and Liu, Z.G., Appl.Phys., A 69 S523 (1999).Google Scholar