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Excimer Laser Induced Modification of Teflon Surface into Silicon Carbide-Like

Published online by Cambridge University Press:  25 February 2011

M. Okoshi ,
K. Toyoda  and
M. Murahara
M. Okoshi
Affiliation:
Graduate Student of Faculty Eng., Tokai University
K. Toyoda
Affiliation:
The Institute of Physical and Chemical Research(IPCR) 2-1 Hirosawa, Wako, Saitama 351-01, JAPAN
M. Murahara
Affiliation:
Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-12, JAPAN
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Abstract

A silicon carbide-like layer was produced in the near-surface region of teflon by irradiating with an ArF excimer laser in a SiH4 and B(CH3)3 mixed gas atmosphere. The pure photochemical reaction was employed in the modification process, and the defluorination of the surface was performed with boron atoms which were photodissociated from B(CH3)3. The CH3 radicals, also photodissociated, induced the dehydrogenation of SiH4 gas; which followed the production of SiHx radicals. The SiHx radicals and CH3 radicals which could not have induced the dehydrogenation of SiH4 were substituted for fluorine atoms of the surface. As a result, the surface was photomodified into silicon carbide. Chemical composition of the photomodified surface was inspected by the XPS and the ATR-FT-IR spectra measurement, and the bonding of the Si-CH3 radicals which traded off the reduction of the fluorine atoms was comfirmed. The Si/C composition ratio of the photomodified surface was 0.7.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 377
Copyright
Copyright © Materials Research Society 1992

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