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Excimer Laser Induced Crystallization of Amorphous Silicon Near Threshold

Published online by Cambridge University Press:  25 February 2011

R.Z. Bachrach ,
K. Winer ,
J.B. Boyce ,
F.A. Ponce ,
S.E. Ready ,
R. Johnson  and
G.B. Anderson
R.Z. Bachrach
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, 94304
K. Winer
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, 94304
J.B. Boyce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, 94304
F.A. Ponce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, 94304
S.E. Ready
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, 94304
R. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, 94304
G.B. Anderson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, 94304
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Abstract

Using a suitably homogenized excimer laser beam, we have shown that the threshold for crystallization of amorphous silicon is well defined and exhibits a square root dependence on the laser energy density above threshold. This sharp threshold behavior can be exploited in a number of ways.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 467
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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