Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T07:40:48.049Z Has data issue: false hasContentIssue false
  • English
  • Français

Exchange of Bonded Hydrogen in Amorphous Silicon by Deuterium

Published online by Cambridge University Press:  26 February 2011

B. Abeles ,
L. Yang ,
D. P. Leta  and
C. Majkrzak
B. Abeles
Affiliation:
Exxon Research and Engineering Co., Annandale, NJ 08801
L. Yang
Affiliation:
Exxon Research and Engineering Co., Annandale, NJ 08801
D. P. Leta
Affiliation:
Exxon Research and Engineering Co., Annandale, NJ 08801
C. Majkrzak
Affiliation:
Brookhaven National Laboratory, Upton, NY 11973
Get access

Abstract

We show that bonded hydrogen in a-Si:H is readily exchanged by atomic deuterium when exposed to a deuterium plasma discharge. The effective diffusion coefficient for the D.H exchange, 10∼14 cnr/sec at 160°C, is comparable to that of interstitial hydrogen in c-Si.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 623
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Abeles, B., Yang, L., Stasiewski, H. and Majkrzak, C., Bull. American Phys. Soc. 31, 334 (1986).Google Scholar
2. Dynamic Heterogeneous Catalysis, Tamaku, K., Academic Press, New York (1978).Google Scholar
3. Brodsky, M. H., Cardona, M. and Cuomo, J. J., Phys. Rev. B16, 3556 (1977).Google Scholar
4. Underwood, J. H. and Barbee, T. W., in Low Energy X-ray Diagnostics, edited by Atwood, O. T. and Henke, B. L., AIP Conference Proceedings No. 75, p. 170.Google Scholar
5. Carlson, D. E. and Magee, C. W., Appl. Phys. Lett. 33, 81 (1978).CrossRefGoogle Scholar
6. Street, R. A., Kakalios, J., Tsai, C. C. and Hayes, J. J., Phys. Rev. (1987).Google Scholar
7. Pankove, J. I., Cryst. Latt. Def. and Amorph. Mater. 11, 203 (1985).Google Scholar
8. Capizzi, M. and Mittiga, A., Fourth Trieste ICTP-IVPAP Semiconductor Symposium, Physica (1986) (in print).Google Scholar