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Excellent Room-Temperature Ferroelectricity in Mn-substituted BiFeO3 Thin Films Formed by Chemical Solution DepositionΨ

Published online by Cambridge University Press:  01 February 2011

Sushil Kumar Singh  and
Hiroshi Ishiwara
Sushil Kumar Singh
Affiliation:
[email protected], Tokyo Institute of Technology, Interdisciplinary Graduate school of Science and Engineering, 4259-J2-67 Nagatsuda, Midori-ku, Yokohama, N/A, 226-8503, Japan, 0081459245874, 0081459245147
Hiroshi Ishiwara
Affiliation:
[email protected], Tokyo Institute of Technology, Yokohama, N/A, 226-8503, Japan
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Abstract

Mn-substituted BiFeO3 (BFO) thin films were formed by chemical solutions deposition on Pt/Ti/SiO2/Si(100) structures. Effects of the Mn-substitution on the structure and ferroelectricity of BFO films were examined. We found that the lattice structure of the film is sensitive to the Mn-substitution and the secondary phase is appears in 50% Mn-substituted BFO films. The leakage current were increased with the Mn-substitution. However, the 5% Mn-substituted BFO film shows low leakage current than undoped BFO films in a high electric field than 0.5 MV/cm. Due to the low leakage current in Mn-doped 3, 5 and 7% BFO films, the saturated P-E hysteresis loops with remanent polarization around 100 μC/cm2 were obtained at RT.

Keywords

ferroelectricchemical synthesisx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 933: Symposium G – Science and Technology of Nonvolatile Memories , 2006 , 0933-G03-03
Copyright
Copyright © Materials Research Society 2006

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