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Evolving Surface Cusps During Strained Layer Epitaxy

Published online by Cambridge University Press:  15 February 2011

D. E. Jesson ,
S. J. Pennycook ,
J.-M. Baribeau  and
D. C. Houghton
D. E. Jesson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6030
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6030
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa K1A OR6, Canada
D. C. Houghton
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa K1A OR6, Canada
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Abstract

We have combined Z-contrast imaging and Ge marker layer experiments to study the evolving surface morphology of SixGel-x alloys grown by molecular beam epitaxy (MBE). Surface cusps are seen to arise as the intersection lines between coherent islands. The potential implications of stress concentrations associated with cusps are considered with a view to strain relaxation in the film via dislocation nucleation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 47
Copyright
Copyright © Materials Research Society 1993

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References

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[12] We would like to thank Carney, S. L., Estes, T. C., and J. T. Luck for technical assistance. This research was sponsored by the Division of Materials Sciences, U.S. Department of Energy, under contract DE-AC05-84OR21400 with Martin Marietta Energy Systems, Inc.Google Scholar