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Evolution of the Properties of Reactively Sputtered Zirconium Nitrides on Silicon Substrates
Published online by Cambridge University Press: 15 February 2011
Abstract
Zirconium nitride films on silicon substrates have been prepared by DC magnetron enhanced reactive sputtering in a N2/Ar gas mixture under various experimental conditions. The films properties (chemical composition, structure, morphology and optical response) were investigated and related to the experimental conditions. It is shown that these properties are strongly related to the target current density which governs the deposition rate, to the deposit thickness, to the nitrogen partial pressure and to the residual gas contamination. The objective of this paper is to detect the minimum film thickness threshold under which a zirconium nitride coating cannot be used in decorative applications.
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- Copyright © Materials Research Society 1994