Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T07:57:52.382Z Has data issue: false hasContentIssue false
  • English
  • Français

Evolution of Stress and Relaxation of Strain of Ge and SiGe Alloy Films on Si(001)

Published online by Cambridge University Press:  17 March 2011

R. Koch ,
J. J. Schulz ,
B. Wassermann  and
G. Wedler
R. Koch
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin
J. J. Schulz
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin
B. Wassermann
Affiliation:
Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195, Berlin
G. Wedler
Affiliation:
Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195, Berlin
Get access

Abstract

We report on real time stress measurements by a sensitive cantilever beam technique of Ge and SiGe Alloy Films on Si(001) in combination with structural investigations by in situ STM (scanning tunneling microscopy) and ex situ AFM (atomic force microscopy). Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain as well as the respective growth mode. For the Stranski-Krastanow system Ge/Si(001) the strain relaxation proceeds mainly in two steps: (i) by the formation of 3D islands on top of the Ge wetting layer and (ii) via misfit dislocations in larger 3D islands and upon their percolation. Co-deposition of Si influences the stress behavior drastically. The growth mode changes from Stranski-Krastanow to a kinetic 3D island mode at Si concentrations of about 20% leading to the so far smallest quantum dots of the Ge/Si system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N5.5
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Stranski, I. N. and Krastanow, L., Sitzungsberichte der Akadademie der Wissenschaften in Wien, Abt. IIb, 146 797 (1937).Google Scholar
2.Bauer, E., Z. Kristallogr. 110 372 (1958).Google Scholar
3.Tersoff, J. and Tromp, R. M., Phys. Rev. Lett. 70 2782 (1993).Google Scholar
4.Shchukin, V.A., Ledentsov, N.N., Kop'ev, P.S. and Bimberg, D., Phys. Rev. Lett. 75 2968 (1995).Google Scholar
5.Pehlke, E., Moll, N., Kley, A. and Scheffler, M., Appl. Phys. A 65 525 (1997).Google Scholar
6.Mo, Y.-W., Savage, D. E., Swartzentruber, B. S. and Lagally, M. G., Phys. Rev. Lett. 65 1020 (1990).Google Scholar
7.Iwawaki, F., Tomitori, M. and Nishikawa, O., Surf. Sci. Lett. 253, L411 (1991).Google Scholar
8.Knall, J. and Pethica, J. B., Surf. Sci. 265 156 (1992).Google Scholar
9.Hoegen, M. Horn-von, Müller, B. H., Al-Falou, A. and Henzler, M., Phys. Rev. Lett. 71 3170 (1993).Google Scholar
10.Tomitori, M., Watanabe, K., Kobayashi, M. and Nishikawa, O., Appl. Surf. Sci. 76/77 322 (1994).Google Scholar
11.Kataoka, Y., Ueba, H. and Tatsuyama, C., J. Appl. Phys. 63 749 (1988).Google Scholar
12.Eaglesham, D. J. and Cerullo, M., Phys. Rev. Lett. 64 1943 (1990).Google Scholar
13.Floro, J. A., Chason, E., Twesten, R. D., Hwang, R. Q. and Freund, L. B., Phys. Rev. Lett. 79 3946 (1997).Google Scholar
14.Floro, J. A., Chason, E., Freund, L. B., Twesten, R. D., Hwang, R. Q. and Lucadamo, G. A., Phys. Rev. B 59 1990 (1999).Google Scholar
15.Wedler, G., Walz, J., Hesjedal, T., Chilla, E. and Koch, R., Phys. Rev. Lett. 80 2382 (1998).Google Scholar
16.Koch, R., Wedler, G., Schulz, J. J. and Wassermann, B., Phys. Rev. Lett. 87 136104 (2001).Google Scholar
17.Weber, M., Koch, R. and Rieder, K. H., Phys. Rev. Lett. 73 1166 (1994).Google Scholar
18., Landolt-Börnstein, Vol. 17c, Halbleiter, edited by Madelung, O., Schulz, M., Weiss, H. (Springer Berlin, 1984).Google Scholar
19.Meade, R. D. and Vanderbilt, D., in “The Structure of Surfaces III”, Springer Series of Surface Science 24, edited by Tong, S. Y.,Hove, M.A. Van, Takayanagi, K., Xie, X. D. (Springer Berlin, 1991), pp.4.Google Scholar
20.Walz, J., Greuer, A., Wedler, G., Hesjedal, T., Chilla, E. and Koch, R., Appl. Phys. Lett. 73 2579 (1998).Google Scholar
21.People, R. and Bean, J. C., Appl. Phys. Lett. 47 322 (1985).Google Scholar