Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T18:56:03.345Z Has data issue: false hasContentIssue false
  • English
  • Français

Evolution of Buried Oxide “Pipe” Defects Upon Implantation Through Particles in Simox Material

Published online by Cambridge University Press:  28 February 2011

M. K. El-Ghor ,
K. A. Joyner  and
H. H. Hosack
M. K. El-Ghor
Affiliation:
Texas Instruments, Inc., Semiconductor Process and Design Center, Dallas, Texas, 75265
K. A. Joyner
Affiliation:
Texas Instruments, Inc., Semiconductor Process and Design Center, Dallas, Texas, 75265
H. H. Hosack
Affiliation:
Texas Instruments, Inc., Semiconductor Process and Design Center, Dallas, Texas, 75265
Get access

Abstract

We have investigated the effect of the presence of oxide particles on the surface of silicon wafers during high energy, high dose implantation of oxygen into silicon. It was found that for single implants with doses of 1.5 × 1018/cm2 or 1.8 × 1018/cm2, such particles produce a non-continuous buried oxide layer in the as-implanted condition as well as after annealing. Etching results showed that no defects, which formed etchable paths through the buried oxide, were produced for particles with diameters 0.43 um or below for the lower dose and 0.53 um for the higher dose.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 153
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Brown, G., “Defect and bulk electrical conduction in SIMOX buried oxide”, 1991 IEEE International SOI. Conference Proc., Vail Valley, Colrado, USA.Google Scholar
2. Celler, G. K., Hemment, P. L. F., West, K. W., and Gibson, J. M., Appl. Phys. Lett. 48, 532(1986).Google Scholar
3. Jaussaud, C., Stoemenos, J., Margail, J., Dupuy, M., Blanchard, B., and Bruel, M., Appl. Phys. Lett. 46, 1064 (1985).Google Scholar
4. Cheek, T. F. Jr, and Chen, D., Mat. Res. Soc. Proc. 107, 53 (1988).Google Scholar
5. Roitman, P., Edelsstein, M., Krause, S. K., Visitserngrakul, S., “Residual defects in SIMOX: threading dislocations and pipes”, 1990 IEEE SOS/SOI Technology Conference, Key West, Florida, USA.Google Scholar
6. Joyner, K., EI-Ghor, M. K., Hosack, H. H., “Effect of particles on buried oxide defects in SIMOX Material”, 1991 IEEE International SOI Conference Proc., Vail Valley, Colorado, USA.Google Scholar