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Evidence of Reduced Self Heating with Partially Depleted SOI MOSFET Scaling

Published online by Cambridge University Press:  01 February 2011

Georges Guegan ,
Romain Gwoziecki ,
Olivier Gonnard ,
Gilles Gouget ,
Christine Raynaud ,
Mikael Casse  and
Simon Deleonibus
Romain Gwoziecki
Affiliation:
[email protected], CEA-DRT-LETI, GRENOBLE Cedex 9, N/A, 38054, France
Olivier Gonnard
Affiliation:
[email protected], STMicroelectronics, CROLLES, N/A, 38920, France
Gilles Gouget
Affiliation:
[email protected], STMicroelectronics, CROLLES, N/A, 38920, France
Christine Raynaud
Affiliation:
[email protected], CEA-DRT-LETI, GRENOBLE Cedex 9, N/A, 38054, France
Mikael Casse
Affiliation:
[email protected], CEA-DRT-LETI, GRENOBLE Cedex 9, 38054, France
Simon Deleonibus
Affiliation:
[email protected], CEA-DRT-LETI, GRENOBLE Cedex 9, N/A, 38054, France
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Abstract

The temperature rise in SOI has been measured on two successive generations. This work shows that self-heating effects become less and less severe with both MOSFET and power supply voltage scaling.

Keywords

microelectronicsSithermal conductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D03-02
Copyright
Copyright © Materials Research Society 2006

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References

1 Raynaud, C. et al, Electrochemical Society Proceedings Volume 2005–03, pp. 331–344.Google Scholar
2 Dallmann, D. A. and Shenai, K., IEEE Transactions on Electron Devices, vol. 42, n° 3, March 1995, pp. 489–496.Google Scholar
3 Su, L. T., Chung, J.E., Antoniadis, D.A., Goodson, K. E. and Flik, M. I., IEEE Transactions on Electron Devices, vol. 41, n° 1, January 1994, pp. 69–75.Google Scholar
4 Tenbroek, B. M., Redman-White, W., Lee, M. S. L. and Uren, M. J., Proceeding 1995, IEEE International SOI Conference, October 1995, pp. 48–49.Google Scholar
5 Workmann, G. O., Fossum, J. G., Krishnan, S. and Pelella, M. M., IEEE Transactions on Electron Devices, vol. 45, n° 1, January 1998, pp. 125–133.Google Scholar
6 BSIM3SOI MOSFET Model Users' Manual, University of California at Berkeley, February 2002.Google Scholar