Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-23T11:32:06.387Z Has data issue: false hasContentIssue false

Evidence of different conduction channels in bulk ZnO using f-MEMSA Analysis of transport properties

Published online by Cambridge University Press:  01 February 2011

Celine Tavares Chevalier
Affiliation:
[email protected], Cea Grenoble, DOPT, 17 rue des Martyrs, Grenoble, 38054, France, +33 4 38 78 47 23
J. Rothman
Affiliation:
[email protected], CEA – LETI, Minatec,, 17 rue des Martyrs,, Grenoble,, 38054, France
G. Feuillet
Affiliation:
[email protected], CEA – LETI, Minatec,, 17 rue des Martyrs,, Grenoble,, 38054,, France
Get access

Abstract

The characterization of transport properties in Zn0 is known to be challenging, particularly due to surface (in the case of bulk) or interface (in the case of heteroepitaxial layers) conduction channels, which puts severe limitations on the interpretation of Hall Effect measurements. In this communication, we report on the study of transport properties of n-type ZnO bulk material using Hall mobility spectrum analysis estimated through the algorithm known as full Maximum Entropy Mobility Spectrum Analysis, f-MEMSA. The electrical properties of bulk Zn0 are measured using a Hall setup for applied magnetic fields µ0H in the range 0T-9T and for temperatures between 50K and 400K. The f-MEMSA analysis highlights the existence of two types of conduction channels in the considered ZnO substrate. We also show that surface conductive channel can be suppressed using appropriate annealing conditions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Schmidt, O., Appl. Phys. A: Solids Surf. 88, 71 (2007).10.1007/s00339-007-3949-1Google Scholar
2 Markevich, I. V., Solid State Commun. 136, 475 (2005).10.1016/j.ssc.2005.09.001Google Scholar
3 Look, D. C., Superlattices Microstruct. 38, 406 (2005).Google Scholar
4 Rothman, J., J. of Elec. Mat. 35, 1174 (2006).10.1007/s11664-006-0238-2Google Scholar
5 Vurgaftman, I., J. Appl. Phys. 84, 4966 (1998).Google Scholar
6 Kiatgamolchai, S., Phys. Rev. E 66, 36705 (2002).10.1103/PhysRevE.66.036705Google Scholar
7 Beck, W.A., J. Appl. Phys. 62 (1987) 541 10.1063/1.339780Google Scholar
8 Saarinen, K., Phys. Scr. T126, 105 (2006).Google Scholar
9 Look, D. C., Solid State Commun. 105, 399 (1998).10.1016/S0038-1098(97)10145-4Google Scholar
10 Liu, X. D., J. Appl. Phys. 102, 073708 (2007).10.1063/1.2786916Google Scholar