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Evidence for Oxygen DX Centers in AlGaN

Published online by Cambridge University Press:  10 February 2011

M. D. Mccluskey ,
N. M. Johnson ,
C. G. Van De Walle ,
D. P. Bour ,
M. Kneissl  and
W. Walukiewicz
M. D. Mccluskey
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
C. G. Van De Walle
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
D. P. Bour
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
M. Kneissl
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
W. Walukiewicz
Affiliation:
Lawrence Berkeley National Laboratory, MS 2-200, 1 Cyclotron Rd., Berkeley, CA 94720
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Abstract

Experimental and theoretical evidence is presented for oxygen DX centers in AlxGa1−xN. As the aluminum content increases, Hall effect measurements reveal an increase in the electron activation energy, consistent with the emergence of a deep DX level from the conduction band. Persistent photoconductivity is observed in Al0 39Ga0. 61N:O at temperatures below 150 K after exposure to light, with an optical threshold energy of 1.3 eV, in excellent agreement with first-principles calculations. Unlike oxygen, silicon does not exhibit DX-like behavior, in agreement with previous theoretical predictions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 531
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Khan, M. Asif and Shur, M. S., Mat. Sci. and Engin. B46, 69 (1997).Google Scholar
2. Neugebauer, J. and Walle, C. G. Van de, Proc. 22”d Intl. Conf. Phys. Semicond., ed. Lockwood, D. J. (Singapore, 1994), p. 2327.Google Scholar
3. Perlin, P. et al., Proc. Mater. Res. Soc. Symp. 449, 519 (1997).Google Scholar
4. Götz, W., Walker, J., Romano, L. T., and Johnson, N. M., Proc. Mater. Res. Soc. Symp. 449, 525 (1997).Google Scholar
5. Lee, H. G., Gershenzon, M., and Goldenberg, B. L., J. Electron. Mat. 20, 621 (1991).Google Scholar
6. Perlin, P. et al., Phys. Rev. Lett. 75, 296 (1995).Google Scholar
7. Wetzel, C. et al., Phys. Rev. Lett. 78, 3923 (1997).Google Scholar
8. Mooney, P. M., J. Appl. Phys. 67, R1 (1990).Google Scholar
9. Chadi, D. J. and Chang, K. J., Phys. Rev. Lett. 61, 873 (1988).Google Scholar
10. Chadi, D. J. and Chang, K. J., Phys. Rev. Lett. 60, 2187 (1988).Google Scholar
11. Van de Walle, C. G., Phys. Rev. B 57, 2033 (1998).Google Scholar
12. Park, C. H. and Chadi, D. J., Phys. Rev. B 55, 12995 (1997).Google Scholar
13. Blakemore, J. S., Semiconductor Statistics (Dover, 1987), p. 134–5.Google Scholar
14. Polyakov, A. Y., Shin, M., Freitas, J. A., Skowronski, M., Greve, D. W., and Wilson, R. G., J. Appl. Phys. 80, 6349 (1996).Google Scholar
15. Wei, S.-H. and Zunger, A., Appl. Phys. Lett. 69, 2719 (1996).Google Scholar
16. Van de Walle, C. G. and Neugebauer, J., Appl. Phys. Lett. 70, 2577 (1997).Google Scholar
17. Wright, A. F. and Nelson, J. S., Appl. Phys. Lett. 66, 3051 (1995).Google Scholar
18. Wetzel, C. et al., Phys. Rev. B 53, 1322 (1996).Google Scholar
19. Shan, W., Schmidt, T. J., Hauenstein, R. J., Song, J. J., and Goldenberg, B., Appl. Phys. Lett. 66, 3492 (1995).Google Scholar
20. Johnson, C., Lin, J. Y., Jiang, H. X., Khan, M. Asif, and Sun, C. J., Appl. Phys. Lett. 68, 1808 (1996).Google Scholar
21. Qui, C. H. and Pankove, J. I., Appl. Phys. Lett. 70, 1983 (1997).Google Scholar
22. Chen, H. M., Chen, Y. F., Lee, M. C., and Feng, M. S., J. Appl. Phys. 82, 899 (1997).Google Scholar
23. Beadie, G., Rabinovich, W. S., Wickenden, A. E., Koleske, D. D., Binari, S. C., and Freitas, J.A., Jr., Appl. Phys. Lett. 71, 1092 (1997).Google Scholar
24. Hirsch, M. T., Wolk, J. A., Walukiewicz, W., and Hailer, E. E., Appl. Phys. Lett. 71, 1098 (1997).Google Scholar
25. Jaros, M., Phys. Rev. B 16, 3694 (1977).Google Scholar
26. Lang, D. V., Logan, R. A., and Jaros, M., Phys. Rev. B 19, 1015 (1979).Google Scholar