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Evidence for Electronic Energy Loss Processes Stimulating Solid Phase Epitaxial Regrowth of Spatially Isolated Amorphous Regions in Semiconductor Systems

Published online by Cambridge University Press:  16 February 2011

I. Jencic ,
M. W. Bench ,
I. M. Robertson  and
M. A. Kirk
I. Jencic
Affiliation:
Dept. of Materials Science and Engineering, University of Illinois, 1304 W. Green St., Urbana IL 61801
M. W. Bench
Affiliation:
Dept. of Materials Science, University of Minnesota, Minneapolis, MN 55455
I. M. Robertson
Affiliation:
Dept. of Materials Science and Engineering, University of Illinois, 1304 W. Green St., Urbana IL 61801
M. A. Kirk
Affiliation:
Argonne National Laboratory, Argonne IL 60439
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Abstract

Solid phase epitaxial regrowth of spatially isolated amorphous regions in Si, Ge and GaP has been stimulated by using an electron beam with energies in the range of 50 to 300 keV. In all materials, the rate at which the amorphous zones disappear decreases as the energy of the electron beam increases from 50 keV reaching a minimum below the threshold displacement voltage before it again increases with increasing electron energy. The experimental results are interpreted in terms of creation and motion of defects (dangling bonds, charged defects) along the amorphouscrystalline interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 481
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Parsons, J. R., Balluffi, R. W. and Koehler, J. S., Appl.Phys.Lett. 1 57 (1962).Google Scholar
2. Priolo, F. and Rimini, E., Mat.Sci.Rep 5 319 (1990).Google Scholar
3. Kobayashi, N., Hasegawa, M., Kobayashi, H., Hayashi, N., Shinohara, M., Ohtani, F., Asari, M., Nucl.Inst.Meth. B 59/60 449 (1991).Google Scholar
4. Ridgway, M. C., Johnson, S. T. and Elliman, R. G., Nucl.Inst.Meth. B 59/60 454 (1991).Google Scholar
5. Williams, J. S. and Austin, M. W., Nucl.Inst.Meth. 168 307 (1980).Google Scholar
6. Johnson, S. T., Elliman, R. G. and Williams, J. S., Nucl. Inst. Meth. B 39 449 (1989).Google Scholar
7. Kwun, S.-I., Lee, M. H., Liou, L. L., Spitzer, W. G., Dunlap, H. L. and Vaidyanathan, K. V., J.Appl.Phys. 57 1022 (1985).Google Scholar
8. Jackson, K. A. in Ion Beam Processing of Advanced Electronic Material, edited by Cheung, N., Roberto, J. and Marwick, A. (Mat. Res. Soc., Pittsburgh 1989) 147, p. 39.Google Scholar
9. Spaepen, F. and Turnbull, D., Laser Annealing of Semiconductors, ed. by Poate, J. M. and Mayer, J. W. (Academic Press New York, 1982) p. 73.Google Scholar
10. Williams, J. S., Surface Modification and Alloying, ed. by Poate, J. M., Foti, G. and Jacobson, D. C. (Plenum Press New York, 1983) p. 133.Google Scholar
11. Williams, J. S. and Elliman, R. G., Phys.Rev.Lett. 51 1069 (1983).Google Scholar
12. Lulli, G., Merli, P. G. and Antisari, M. V., Phys.Rev. B 36 8038 (1987).Google Scholar
13. Lulli, G., Merli, P. G. and Antisari, M. V. in Beam Solid Interactions And Transient Thermal Processing, edited by Aziz, M. J., Rehn, L. E. and Stritzker, B. (Mat.Res.Soc., Pittsburgh 1988) 100, p. 375.Google Scholar
14. Corticelli, F., Lulli, G. and Merli, P. G., Phil.Mag.Lett. 61 101 (1990).Google Scholar
15. Ruault, M. O., Chaumont, J., Pennison, J. M. and Bourret, A., Phil.Mag. A 50 667 (1984).Google Scholar
16. Bench, M. W., Robertson, I. M. and Kirk, M. A. in Phase Formation And Modification By Beam Solid Interactions, edited by Was, G. S., Rehn, L. E. and Follstaedt, D. (Materials Research Society, Pittsburgh 1992) 235, p.27.Google Scholar
17. Jencic, I., Bench, M. W., Robertson, I. M. and Kirk, M. A., Unpublished work.Google Scholar
18. Vetrano, J. S., Bench, M. W., Robertson, I. M. and Kirk, M. A., Met.Trans. A 50 2673 (1989).Google Scholar
19. Bench, M. W., Tappin, D. K. and Robertson, I. M., Phil.Mag.Lett. 66 39 (1992).Google Scholar
20. Vavilov, V. S., Kiv, A. E. and Niyazova, O. R., Phys.Stat.Sol.(a) 32 11 (1975).Google Scholar
21. Bench, M. W., Ph.D.Thesis, Illinois, (1992).Google Scholar