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Evaluation of Thin Dielectric-Glue Wafer-Bonding for ThreeDimensional Integrated Circuit-Applications

Published online by Cambridge University Press:  17 March 2011

Y. Kwon ,
J. Yu ,
J.J. McMahon ,
J.-Q. Lu ,
T.S. Cale  and
R.J. Gutmann
Y. Kwon
Affiliation:
Focus Center - New York, Rensselaer: Interconnections for Hyperintegration Rensselaer Polytechnic Institute, Troy, New York 12180-3590
J. Yu
Affiliation:
Focus Center - New York, Rensselaer: Interconnections for Hyperintegration Rensselaer Polytechnic Institute, Troy, New York 12180-3590
J.J. McMahon
Affiliation:
Focus Center - New York, Rensselaer: Interconnections for Hyperintegration Rensselaer Polytechnic Institute, Troy, New York 12180-3590
J.-Q. Lu
Affiliation:
Focus Center - New York, Rensselaer: Interconnections for Hyperintegration Rensselaer Polytechnic Institute, Troy, New York 12180-3590, [email protected]
T.S. Cale
Affiliation:
Focus Center - New York, Rensselaer: Interconnections for Hyperintegration Rensselaer Polytechnic Institute, Troy, New York 12180-3590
R.J. Gutmann
Affiliation:
Focus Center - New York, Rensselaer: Interconnections for Hyperintegration Rensselaer Polytechnic Institute, Troy, New York 12180-3590
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Abstract

The critical adhesion energy of benzocyclobutene (BCB)-bonded wafers isquantitatively investigated with focus on BCB thickness, material stack andthermal cycling. The critical adhesion energy depends linearly on BCBthickness, increasing from 19 J/m2 to 31 J/m2 as theBCB thickness increases from 0.4 μm to 2.6 μm, when bonding silicon waferscoated with plasma enhanced chemical vapor deposited (PECVD) silicon dioxide(SiO2). In thermal cycling performed with 350 and 400 oC peak temperatures,the significant increase in critical adhesion energy at the interfacebetween BCB and PECVD SiO2 during the first thermal cycle isattributed to relaxation of residual stress in the PECVD SiO2layer. On the other hand, the critical adhesion energy at the interfacebetween BCB and PECVD silicon nitride (SiNx) decreases due to theincrease of residual stress in the PECVD SiNx layer during thefirst thermal cycle.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F6.16
Copyright
Copyright © Materials Research Society 2004

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