Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-09T05:41:50.952Z Has data issue: false hasContentIssue false
  • English
  • Français

Evaluation of the Electromigration Performance of New Aluminium Via Plug-Fill Techniques for 0.25μm and 0.18μm Technologies

Published online by Cambridge University Press:  10 February 2011

S. Foley ,
N. Chan Tung ,
C. Gounelle ,
G. Wyborn ,
S. Louwers  and
A. Mathewson
S. Foley
Affiliation:
National Microelectronics Research Centre, University College – Lee Maltings, Prospect Row, Cork, Ireland. Tel: +353 21 904382Fax: +353 21 270271email: [email protected]
N. Chan Tung
Affiliation:
Centre Commun Philips/CNET/SGS Thomson, 850 rue Jean Monnet, BP16 – 38921, Crolles cedex, France
C. Gounelle
Affiliation:
Centre Commun Philips/CNET/SGS Thomson, 850 rue Jean Monnet, BP16 – 38921, Crolles cedex, France
G. Wyborn
Affiliation:
Centre Commun Philips/CNET/SGS Thomson, 850 rue Jean Monnet, BP16 – 38921, Crolles cedex, France
S. Louwers
Affiliation:
Centre Commun Philips/CNET/SGS Thomson, 850 rue Jean Monnet, BP16 – 38921, Crolles cedex, France
A. Mathewson
Affiliation:
National Microelectronics Research Centre, University College – Lee Maltings, Prospect Row, Cork, Ireland. Tel: +353 21 904382Fax: +353 21 270271email: [email protected]
Get access

Abstract

The electromigration performance of samples fabricated with new Al via-filling techniques are studied and compared. The new techniques are (1) Hot Al mono-chamber and (2) CVD/PVD Al. Their electromigration performances are assessed over a range of stress conditions and compared with that of a standard W- etchback technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 305
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Park, C.S., Lee, S.I., Park, J.H., Sohn, J.H., Chin, D. and Lee, J.G., Proc 8th IEEE VMIC Conf., 326 (1991)Google Scholar
[2] Chen, F.S., Liu, Y.S., Dixit, G.A., Sundaresan, R., Wei, C.C. and Liou, F.T., Tech. Dig. IEDM, 51 (1990)Google Scholar
[3] Ionoue, M., Hashizume, K. and Tsuchikawa, H., J. Vac. Sci. Technol., A–6, 1636, (1988)10.1116/1.575298Google Scholar
[4] Lee, Y.H., Wu, K., Mielke, N., Ma, L.J. and Hui, S., Proc. IEEE IRPS Conf., 1997 Google Scholar
[5] Coughlan, J., Foley, S. and Mathewson, A., Proc. ESSDERC Conf., 452, (1997)Google Scholar
[6] Chang, C.Y. and Sze, S.M., in ULSI Technology, (McGraw Hill publishers New York 1996) pp. 412 Google Scholar
[7] Kahn, H., Thompson, C.V. and Cooperman, S.S., Proc. Mat. Res. Soc. Symp., Vol. 265, (1992)10.1557/PROC-265-65Google Scholar
[8] Maiz, J.A. and Sabi, B., Proc. IEEE IRPS Conf., 145, (1987)Google Scholar