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Evaluation of Sputtering Deposited 2-Dimensional MoS2 Film by Raman Spectroscopy

Published online by Cambridge University Press:  04 June 2015

S. Ishihara ,
K. Suda ,
Y. Hibino ,
N. Sawamoto ,
T. Ohashi ,
S. Yamaguchi ,
K. Matsuura ,
H. Machida ,
M. Ishikawa  and
H. Sudoh
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S. Ishihara
Affiliation:
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan.
K. Suda
Affiliation:
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan.
Y. Hibino
Affiliation:
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan.
N. Sawamoto
Affiliation:
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan.
T. Ohashi
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan.
S. Yamaguchi
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan.
K. Matsuura
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan.
H. Machida
Affiliation:
Gas-phase Growth Ltd, #301 Nokodai-Tamakoganei Venture Port, 2-24-16 Naka, Koganei, Tokyo 184-0012, Japan.
M. Ishikawa
Affiliation:
Gas-phase Growth Ltd, #301 Nokodai-Tamakoganei Venture Port, 2-24-16 Naka, Koganei, Tokyo 184-0012, Japan.
H. Sudoh
Affiliation:
Gas-phase Growth Ltd, #301 Nokodai-Tamakoganei Venture Port, 2-24-16 Naka, Koganei, Tokyo 184-0012, Japan.
H. Wakabayashi
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan.
A. Ogura
Affiliation:
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan.
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Abstract

Molybdenum disulfide (MoS2), one of the transition-metal dichalcogenides, is a 2-dimensional semiconducting material that has a layered structure. Owing to excellent optical and electronic properties, the ultra-thin MoS2 film is expected to be used for various devices, such as transistors and flexible displays. In this study, we investigated the physical and chemical properties of sputtered-MoS2 film in the sub-10-nm region by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). As the results of Raman spectroscopy investigations, we observed two Raman modes, E12g and A1g, in the 2-dimensional MoS2 films. As the thickness of the MoS2 film decreased, the peak frequency difference between E12g and A1g modes increased. From the XPS investigations, we confirmed sulfur reductions from the 2-dimensional MoS2 films. Therefore, we considered that the sulfur vacancies in the MoS2 film affected the Raman peak positions. Moreover, we performed the additional sulfurization of sputtered-MoS2 films. From the XPS and Raman investigations, the quality of the sputtered-MoS2 films was improved by the additional sulfurization.

Keywords

sputteringRaman spectroscopyx-ray photoelectron spectroscopy (XPS)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1781: Symposium O – Emerging Non-Graphene 2D Materials , 2015 , pp. 11 - 16
Copyright
Copyright © Materials Research Society 2015 

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