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Evaluation of Interface Strength between a Copper Submicron Dot and Silicondioxide Substrate

Published online by Cambridge University Press:  15 March 2011

Hiroyuki Hirakata ,
Takayuki Kitamura  and
Yoshitake Yamamoto
Hiroyuki Hirakata
Affiliation:
Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
Takayuki Kitamura
Affiliation:
Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
Yoshitake Yamamoto
Affiliation:
Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
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Abstract

An experimental evaluation method of interface strength between ductile submicron-dots and a hard substrate is developed. The validity is examined with copper (Cu) cylindrical dots of submicron scale on a silicondioxide (SiO2) substrate. A hard-layer of tungsten (W) is employed to restrain the deformation and concentrate the stress near the free-edge of Cu/SiO2. A diamond tip is dragged horizontally along the SiO2 surface and the load is applied to the side edge of the W layer at a constant displacement rate using a modified atomic force microscope. Both the lateral and the vertical loads and displacements are continuously monitored during the test. After the tip hits the W layer, the lateral load, Fl, increases almost proportionally with the lateral displacement, σl. The Cu dot with the W layer then is clearly separated from the SiO2 along the interface. The restraint by the W layer works well so that there are little damages in both the delaminated W/Cu dot and the substrate. The delamination lateral load, FlC, is successfully evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 821: Symposium P – Nanoscale Materials & Modeling-Relations Among Processing, Microstructure and Mechanical Properties , 2004 , P2.4
Copyright
Copyright © Materials Research Society 2004

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References

1. Baba, S., Kikuchi, A. and Kinbara, A., J. Vac. Sci. Technol. A 4, 3015 (1986).Google Scholar
2. Venkataraman, S., Kohlstedt, D. L. and Gerberich, W. W., J. Mater. Res. 11–12, 3133 (1996).Google Scholar
3. Kriese, M. D., Gerberich, W. W. and Moody, N. R., J. Mater. Res. 14, 3007 (1999).Google Scholar
4. Marshall, D. B. and Evans, A. G., J. Appl. Phys. 56, 2632 (1984).Google Scholar
5. Kamiya, S., Kimura, H., Yamanobe, K., Saka, M. and Abe, H., Thin Solid Films 414, 91 (2002).Google Scholar
6. Boer, M. P. de, Kriese, M. D. and Gerberich, W. W., J. Mater. Res. 12, 2673 (1997).Google Scholar
7. Dauskardt, R. H., Lane, M., Ma, Q. and Krishna, N., Engng. Fract. Mech. 61, 141 (1998).Google Scholar
8. Butler, D. W., J. Phys. E 3, 979 (1970).Google Scholar
9. Kitamura, T., Shibutani, T. and Ueno, T., Engng. Fract. Mech. 69, 1289 (2002).Google Scholar
10. Kitamura, T., Hirakata, H. and Itsuji, T., Engng. Fract. Mech. 70, 2089 (2003).Google Scholar
11. Bagchi, A., Lucas, G. E., Suo, Z. and Evans, A. G., J. Mater. Res. 9, 1734 (1994).Google Scholar
12. Kinbara, A., Kusano, E., Kamiya, T., Kondo, I. and Takenaka, O., Thin Solid Films 317, 165 (1998).Google Scholar
13. Becker, T. L. Jr., McNancy, J. M., Cannon, R. M. and Ritchie, R. O., Mech. Mater. 25, 291 (1997).Google Scholar
14. Hirakata, H., Kitamura, T. and Yamamoto, Y., Int. J. Solids Struct. 41, 3243 (2004)Google Scholar
15. Hommel, M. and Kraft, O., Acta Mater. 49, 3935 (2001).Google Scholar