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Evaluation of Gap States in Hydrogen-Terminated Silicon Surfaces and Ultrathin SiO2/Si Interfaces by using Photoelectron Yield Spectroscopy

Published online by Cambridge University Press:  10 February 2011

S. Miyazaki ,
T. Tamura ,
T. Maruyama ,
H. Murakami ,
A. Kohno  and
M. Hirose
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higasi-Hiroshima 739, JAPAN, [email protected]
T. Tamura
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higasi-Hiroshima 739, JAPAN, [email protected]
T. Maruyama
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higasi-Hiroshima 739, JAPAN, [email protected]
H. Murakami
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higasi-Hiroshima 739, JAPAN, [email protected]
A. Kohno
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higasi-Hiroshima 739, JAPAN, [email protected]
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higasi-Hiroshima 739, JAPAN, [email protected]
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Abstract

The energy distributions of gap state densities for H-terminated Si surfaces and thermally-grown SiO2/c-Si interfaces have been evaluated by total photoelectron yield spectroscopy (PYS) with a dynamic range of eight orders of magnitude which is sufficient to detect the density of states as low as 1010cm−2eV−1. It is confirmed from the threshold energies for direct and indirect photo-excitations that, for monohydride-terminated Si(111) surfaces prepared by an NH4F treatment, no significant band-bending is observable. For H-terminated n-type sample, the gap state densities of the order of 1011cm−2eV−1 were estimated in the region within 0.4 eV from the valence band edge, which may be attributable to a very little oxidation in the sample preparation. It is also found that, for as-grown 2.5nm-thick SiO2/n+ Si, there exist interface states around midgap with densities as high as ∼1012cm−2eV−1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 81
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Takahagi, T., Nagami, I., Ishitani, A., Kuroda, H. and Nagasawa, Y., J. Appl. Phys. 64 (1988) 3516.Google Scholar
[2] Higashi, G. S., Chabal, Y. J., Trucks, G. W., and Raghavachari, K., Appl. Phys. Lett. 56 (1990) 656.Google Scholar
[3] Yasaka, T., Kanda, K., Sawara, K., Miyazaki, S. and Hirose, M., Jpn. J. Appl. Phys. 30 (1991) 3567.Google Scholar
[4] Yablonovich, E., Allara, D. A., Chang, C. C., Gmitter, T. and Bright, T. B., Phys. Rev. Lett, 57 (1986) 249.Google Scholar
[5] Miyazaki, S., Schäfer, J., Ristein, J. and Ley, L., Appl. Phys. Lett. 68 (1996) 1247.Google Scholar
[6] Tavendale, A. J., Williams, A. A., Pearton, S. J., Appl. Phys. Lett. 48 (1988) 590.Google Scholar
[7] Kane, E. O., Phys. Rev. 127 (1962) 131.Google Scholar
[8] Gobeli, G. W. and Allen, F. G., Phys. Rev. 127 (1962) 141.Google Scholar
[9] Gobeli, G. W. and Allen, F. G., in Semiconductors and Semimetals Vol. 2, eds. Willardson, R. K. and Beer, A. C. (Academic Press, 1966) Chapter 11.Google Scholar
[10] Sebenne, C., Bolmont, D., Guichar, G. and Balkanski, M., Phy. Rev. B 12 (1975) 3280.Google Scholar
[11] Yasaka, T., Takakura, M., Sawara, K., Uenaga, S., Yasutake, H., Miyazaki, S. and Hirose, M., IEICE Trans. Electron, E75–C (1992) 68.Google Scholar
[12] Miyazaki, S., Nishimura, N., Fukuda, M., Ley, L. and Ristein, J., Appl. Surf. Sci. (1997) 585.Google Scholar