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The ETCH Mechanism for Al2O3 in Fluorine and Chlorine Based RF Dry Etch Plasmas

Published online by Cambridge University Press:  28 February 2011

W. G. M. van Den Hoek
W. G. M. van Den Hoek*
Affiliation:
Philips Research Laboratories 5600 3A Eindhoven, The Netherlands (Philips Research Laboratories, Sunnyvale, CA 94088-3409
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Abstract

The etch behaviour of Al2O3 was studied in Ar, CHF3/Ar, CF4/O2 and Cl2 low pressure RIE plasmas.The influence of dc self-bias voltage, wafer temperature, gas flow and pressure on the Al2O3 etch behaviour was investigated.This was compared with the etch behaviour of SiO2, Mo, Au and Si under the same conditions.It was found that even though aluminum does not form volatile fluorides addition of CHF3 to an Ar plasma resulted in a ninefold increase in the A12O3 etch rate.This compares to a fivefold increase in the SiO2 etch rate and a 20% decrease in Au etch rate.

An A12O3 etch mechanism for fluorine based plasmas is proposed, comprising of the formation of AlFx and its subsequent removal under influence of high energy ion bombardment.The latter appears to be the rate limiting step.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 71
Copyright
Copyright © Materials Research Society 1986

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