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Esr of Defects in III–V Compounds
Published online by Cambridge University Press: 15 February 2011
Abstract
A survey is given on deep defects in GaP, GaAs and InP identified by electron spin resonance (ESR). Defect structures to be discussed are (i) 3d transition metals, (ii) antisite defects and (iii) radiation induced centers. The relevance of such defects for the III–V materials technology will be illustrated by representative examples.
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- Copyright © Materials Research Society 1982
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