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ESR and LESR Studies in CVD Diamond

Published online by Cambridge University Press:  15 February 2011

C. F. O. Graeff ,
E. Rohrer ,
C. E. Nebel ,
M. Stutzmann ,
H. GUttler  and
R. Zachai
C. F. O. Graeff
Affiliation:
Walter Schottky Institut, TU-MUnchen, D-85748 Garching, Germany, [email protected]
E. Rohrer
Affiliation:
Walter Schottky Institut, TU-MUnchen, D-85748 Garching, Germany, [email protected]
C. E. Nebel
Affiliation:
Walter Schottky Institut, TU-MUnchen, D-85748 Garching, Germany, [email protected]
M. Stutzmann
Affiliation:
Walter Schottky Institut, TU-MUnchen, D-85748 Garching, Germany, [email protected]
H. GUttler
Affiliation:
Daimler-Benz AG, Forschung und Technik, D-89013 Ulm, Germany
R. Zachai
Affiliation:
Daimler-Benz AG, Forschung und Technik, D-89013 Ulm, Germany
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Abstract

CVD diamond films with nitrogen content varying from 10 ppm to 132 ppm have been studied by electron spin resonance (ESR), light-induced ESR (LESR) as well as spin-dependent conductivity (SDC). Two characteristic signals have been observed. A carbon-related defect line with g = 2.0029 ± 0.0002 and width 4 ± 1 G, is observed in ESR, LESR and SDC. The intensity of this line measured by ESR increases linearly with nitrogen content. For low-defect-density samples, or after illuminating the high-defect-density samples with UV light, a second signal is observed both in ESR and LESR, but not in SDC, with a central line at g = 2.0024 ± 0.001 and width 0.2 ± 0.1 G and related hyperfine satellites ≈30 G away from the central line. This line is assigned to isolated substitutional nitrogen, the so-called P1 center. The density of N-related paramagnetic states is strongly affected by illumination and heat treatments. Spin-dependent conductivity measurements show that the dark conductivity at room temperature in CVD-diamond is dominated by hopping at the g = 2.0029 defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 495
Copyright
Copyright © Materials Research Society 1996

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