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Er-Doping in Silicon by Pulsed Laser Irradiation

Published online by Cambridge University Press:  21 February 2011

Kenshiro Nakashima
Kenshiro Nakashima*
Affiliation:
Nagoya Institute of Technology, Department of Electrical and Computer Engineering, Showa-ku, Nagoya 466, Japan
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Abstract

Erbium ions were successfully doped in silicon by pulsed laser irradiation above the threshold laser energy density. Photoluminescence peaks at 1.54, 1.59 and 1.64 µm from Er-optical centers were observed after annealing of Er-doped samples. The intensity of the 1.54 µm Er-emission band increased upon increase in the laser energy density, and then gradually decreased after reaching the maximum, due to the laser sputtering of the silicon substrate. Oxygen atoms, which were unintentionally codoped with Er-ions, were found to be distributed in the same region as in Er-ions, and were suggested to play roles to activate Er-optical centers. The maximum concentration of Er-ions doped in the solid state regime were estimated to be the order of 1018 cm−3 by the Rutherford backscattering measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 61
Copyright
Copyright © Materials Research Society 1993

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References

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