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Erbium-silicon-oxide Nano-complexes Prepared by Wet Chemical Synthesis

Published online by Cambridge University Press:  10 February 2011

H. Isshiki ,
M.J.A. de Dood ,
T. Kimura  and
A. Polman
H. Isshiki
Affiliation:
FOM-Institute Amolf, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands Department of Electronic Engineering, The University of Electro-Communications, Tokyo 182-8585, Japan
M.J.A. de Dood
Affiliation:
FOM-Institute Amolf, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
T. Kimura
Affiliation:
Department of Electronic Engineering, The University of Electro-Communications, Tokyo 182-8585, Japan
A. Polman
Affiliation:
FOM-Institute Amolf, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

An entirely new method to fabricate optically active and carrier-mediated excitable erbium complexes on silicon is presented. The Er-Si-O nano-complexes are formed by spin-coating a Si (100) substrate with an ErC13 solution, followed by a rapid thermal oxidation and annealing sequence (RTOA). Intense room-temperature luminescence is observed from the Er-Si-O nano-complexes, with a line width as narrow as 4 meV at room temperature. The Er emission at 1.53 μm can be excited both directly and through photo carriers. Formation and optical activation of the Er-Si-O nano-complexes are discussed. In addition, an application of the wet chemical synthesis technique to incorporation of the Er-Si-O nano-complexes into nano-porous silicon waveguides is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I3.6
Copyright
Copyright © Materials Research Society 2003

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