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Er environment in a-Si:HEr> prepared by PECVD

Published online by Cambridge University Press:  17 March 2011

Cínthia Piamonteze ,
Leandro R. Tessler ,
Hélio Tolentino ,
Maria do Carmo Martins Alves ,
Gerhard Weiser  and
Eugeny Terukov
Cínthia Piamonteze
Affiliation:
Instituto de Física “Gleb Wataghin”, UNICAMP, C. P. 6165, 13083-970 Campinas, SP, Brazil
Leandro R. Tessler
Affiliation:
Instituto de Física “Gleb Wataghin”, UNICAMP, C. P. 6165, 13083-970 Campinas, SP, Brazil
Hélio Tolentino
Affiliation:
Laboratório Nacional de Luz Síncrotron, C. P. 6093, 13083-970, Campinas, SP, Brazil
Maria do Carmo Martins Alves
Affiliation:
Laboratório Nacional de Luz Síncrotron, C. P. 6093, 13083-970, Campinas, SP, Brazil
Gerhard Weiser
Affiliation:
Marburg University, Marburg, Germany
Eugeny Terukov
Affiliation:
A. F. Ioffe Institute, St. Petersburg, Russia
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Abstract

The Er local environment of a-Si:H<Er> prepared by PECVD using a metalorganic precursor was determined by EXAFS. We found that in as-deposited samples Er is coordinated to 6 oxygen atoms at 2.28±0.01Å, very similar to Er2O3. Annealing at 420°C hardly affects the Er neighborhood, but higher annealing temperatures (starting at 600°C up to 1033°C) decrease the Er-O separation as much as 0.05Å, maintaining the Er average coordination around 6. This is interpreted as due to the formation of a carbon second neighbor shell. Our results show that the Er local environment is not related with the luminescence enhancement for annealing at moderate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A11.2
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Michel, J., Benton, J. L., Ferrante, R. F., Jacobson, D. C., Eaglesham, D. F., Fitzgerald, E. A., Xie, Y.-H., Poate, J. M. and Kimerling, L. C., J. Appl. Phys., 70, 2672 (1991).Google Scholar
2. Lombardo, S., Campisano, S. U., Hoven, G. V. van den, Cacciato, A. and Polman, A., Appl. Phys. Lett., 63, 1942 (1993).Google Scholar
3. Tessler, L. R., Braz. J. Phys. 29, 616 (1999).Google Scholar
4. Bressler, M. S., Gusev, O. B., Kudoyarova, V. Kh., Kuznetsov, A. N., Pak, P. E., Terukov, E. I., Yassievich, I. N., Zakharchenya, B. P., Fuhs, W. and Sturm, A., Appl. Phys. Lett., 67, 3599 (1995).Google Scholar
5. Shin, J. H., Serna, R., Hoven, G. N. van den, Polman, A., Sark, W. G. J. H. M. van and Vredenberg, A. M., Appl. Phys. Lett., 68, 997 (1996).Google Scholar
6. Terukov, E. I., Kon'kov, O. I., Kudoyarova, V. Kh., Gusev, O. B. and Weiser, G., Semiconductors 32, 884 (1998).Google Scholar
7. Tessler, L. R., Piamonteze, C., Iniguez, A. C., Alves, M. C. Martins and Tolentino, H., in Applications of Synchrotron Radiation Techniques to Materials Science IV, ed. Mini, S. M., Perry, D. L., Stock, S. R. and Terminello, L. J., (Mat. Res. Soc. Proc. 524, Pittsburgh, 1998), pp. 327–332.Google Scholar
8. Piamonteze, C., Iniguez, A. C., Tessler, L. R., Alves, M. C. Martins, Tolentino, H., Phys. Rev. Lett. 81, 4652 (1998).Google Scholar
9. Masterov, V. F., Nasredinov, F. S., Seregin, P. P., Kudoyarova, V. Kh., Kuznetsov, A. N. and Terukov, E. I., Appl. Phys. Lett. 72, 728 (1998).Google Scholar
10. Masterov, V. F., Nasredinov, F. S., Seregin, P. P., Terukov, E. I. and Mezdrogina, M. M., Semiconductors 32, 636 (1998).Google Scholar
11. Terukov, E. I., Kon'kov, O. I., Kudoyarova, V. Kh. and Gusev, O. B., Semiconductors 33, 177 (1999).Google Scholar
12. Ressler, T., J. Physique IV 7, C2–269 (1997).Google Scholar
13. Andry, P. S., Varhue, W. J., Ladipo, F., Ahmed, K., Adams, E., Lavole, M., Klein, P. B., Hengehold, R. and Hunter, J., J. Appl. Phys. 80, 551 (1996).Google Scholar
14. Tessler, L. R., Piamonteze, C., Alves, M. C. Martins, Tolentino, H., J. Non-Cryst. Solids 266 (2000) 598.Google Scholar