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Equilibrium Phase Diagrams for Analysis of the Oxidation of III-V Compound Semiconductors

Published online by Cambridge University Press:  25 February 2011

G. P. Schwartz*
Affiliation:
AT&T Bell Laboratories Murray Hill, NJ 07974
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Abstract

The phases which result from the oxidation of III-V compound semiconductors can be predicted from a knowledge of the condensed phase portion of their equilibrium phase diagrams. Examples will be shown for arsenides, antimonides, and phosphides. Use of these diagrams explicitly presumes equilibrium growth conditions, and that assumption often fails. In such cases kinetic rather than thermodynamic factors dominate the determination of the observed phases. Examples of this phenomenon for anodic oxidation will be presented. Recent interest in high pressure oxidation conditions as a means of alleviating kinetic limitations will be discussed for InP. The phase diagrams can also be used to predict interfacial reactions under certain conditions and data for GaAs will serve to illustrate this point.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

[1] For reviews of the In-Sb-O, GaAs-O, In-As-O, and In-P-O systems see the following references. Smirnova, T. P., Golubenko, A. N., Zacharchuk, N. F., Belyi, V. I., Kokovin, G. A., and Valisheva, N. A., Thin Solid Films 76, 11 (1981). G. D. Thurmond, G. P. Schwartz, G. W. Kammlott, and B. Schwartz, J. Electrochem. Soc. 127, 1366 (1980). G. P. Schwartz, W. A. Sunder, J. E. Griffiths, and G. J. Gualtieri, Thin Solid Films 94, 205 (1982). G. P. Schwartz, W. A. Sunder, and J. E. Griffiths, J. Electrochem. Soc. 129, 1361 (1982).CrossRefGoogle Scholar
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[4] Schwartz, G. P., Schwartz, B., Griffiths, J. E., and Sugano, T., J. Electrochem. Soc. 127, 2269 (1980).CrossRefGoogle Scholar