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Equilibration Kinetics in Interstitially Doped a-Si:H

Published online by Cambridge University Press:  25 February 2011

K. Winer  and
R. A. Street
K. Winer
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
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Abstract

The time dependence of the dc conductivity of Li- and Be-doped a-Si:H after thermal quenching is reported. The equilibration kinetics, similar to that observed in substitutionally-doped a-Si:H, is characterized by stretched exponential decays and activated time constants. The equilibration times for Bedoped a-Si:H were too short (< 1 min) for the kinetics of equilibration to be accurately measured. In Li-doped a-Si:H, the equilibration time constants were longer than those in 1% P-doped a-Si:H, which is due to the smaller carrier concentrations in the Li-doped a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 137
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1) Smith, Z. E., Aljishi, S., Slobodin, D., Chu, V., Wagner, S., Lenahan, P.M., Arya, R.R., and Bennett, M.S., Phys. Rev. Lett. 57, 2450 (1986).Google Scholar
2) Street, R.A., Kakalios, J., and Hayes, T.M., Phys. Rev. B34, 3030 (1986); R.A. Street, J. Kakalios, C.C. Tsai, and T.M. Hayes, Phys. Rev. B35, 1316 (1987).Google Scholar
3) See, for example, Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific, Singapore, 1988).Google Scholar
4) Smith, Z E. and Wagner, S., Phys. Rev. Lett. 59, 688 (1987).Google Scholar
5) Street, R.A., Phys. Rev. Lett. 49, 1187 (1982); J. Non-Cryst. Solids 77/78, 1 (1985).Google Scholar
6) Street, R.A., Mat. Res. Soc. Symp. Proc. Vol.95, 13 (1987).Google Scholar
7) Street, R.A., Hack, M., and Jackson, W.B., Phys. Rev. B37, 4209 (1988).CrossRefGoogle Scholar
8) Street, R.A. and Winer, K., Phys. Rev. B40 (1989).Google Scholar
9) Winer, K., J. Vac. Sci. Technol. B7 (1989).Google Scholar
10) Jackson, W.B., Phys. Rev. B (to be published).Google Scholar
11) Winer, K. and Street, R.A., Appl. Phys. Lett. 31, 850 (1988).Google Scholar
12) Winer, K. and Street, R.A., J. Appl. Phys. 65, 2281 (1989).Google Scholar
13) Kakalios, J. and Street, R.A., AIP Conf. Proc. 157, edited by Stafford, B.L. and Sabisky, E. (AIP, New York, 1987), p. 179.Google Scholar
14) Kakalios, J. and Street, R.A., Phys. Rev. B 34, 6014 (1988).Google Scholar
15) Street, R.A., Tsai, C.C., Kakalios, J., and Jackson, W.B., Phil. Mag B56, 305 (1987).Google Scholar