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EQUALLY STRAINED Si/SiGe SUPERLATTICES ON Si SUBSTRATES

Published online by Cambridge University Press:  28 February 2011

E. KASPER ,
H.-J. HERZOG ,
H.DAEMBKES-a1  and
G. ABSTREITER
E. KASPER
Affiliation:
AEG Research Center Ulm, Sedanstr. 10, D−7900 Ulm, FRG
H.-J. HERZOG
Affiliation:
AEG Research Center Ulm, Sedanstr. 10, D−7900 Ulm, FRG
G. ABSTREITER
Affiliation:
Technical University Munich, Physics Department E16, James-Franckstrasse, D-8046 Garching, FRG
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Abstract

Growth of Si/SiGe superlattices on Si substrates by molecular beam epitaxy (MBE) is described. Strain symmetrization in the superlattice is achieved with an incommensurate SiGe buffer layer. The concept of strainsymmetrization is explained and properties of buffer and strained layer superlattices are investigated. A twodimensional electron gas with enhanced room temperature mobility and folded phonon modes within the reduced onedimensional Brillouin zone are observed. An n-channel Si/SiGe MODFET demonstrates the device applications of this material concept.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 347
Copyright
Copyright © Materials Research Society 1986

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