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Eqilibrium Analysis of the TMGa-TMA1-AsH3-H2 Mocvd Epitaxial Growth System

Published online by Cambridge University Press:  25 February 2011

Hyuk J. Moon ,
Thomas G. Stoebe  and
Brian K. Chadwick
Hyuk J. Moon
Affiliation:
Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195
Thomas G. Stoebe
Affiliation:
Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195
Brian K. Chadwick
Affiliation:
United Epitaxial Technologies, Inc., 19545 N.W. Von Neumann Drive, D4/210, Beaverton, OR 97006
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Abstract

The thermodynamic equilibrium state of the Ga-Al-As-C-H system was determined theoretically by means of an iterative equilibrium constant method. This method of calculation is presented and discussed. With very little operator input, the program is capable of computing the partial pressures of the gas-phase species present in the equilibrated system.

In these calculations the system was considered to be saturated with solid-phase A1GaAs and included 58 plausible gas-phase intermediates which evolved from the initially present gas species; trimethylgallium, trimethylaluminum, arsine, and hydrogen. Temperature and total system pressure ranges investigated were 750–1100 K and 0.1 atm-1.0 atm, respectively. The effects of temperature and pressure variations, in addition to effects caused by changes in the appropriate atom ratios, have been delineated. The properties of this equilibrated system are compared with those from recent thermodynamic research efforts on AlGaAs systems consisting of only gaseous constituents.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 123
Copyright
Copyright © Materials Research Society 1989

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References

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