Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-22T08:52:57.626Z Has data issue: false hasContentIssue false
  • English
  • Français

EPR and emission study of silicon suboxide nanopillars

Published online by Cambridge University Press:  19 November 2013

V. Bratus’ ,
I. Indutnyi ,
P. Shepeliavyi  and
T. Torchynska
V. Bratus’
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv 03680, Ukraine
I. Indutnyi
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv 03680, Ukraine
P. Shepeliavyi
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv 03680, Ukraine
T. Torchynska
Affiliation:
ESFM-Instituto Politécnico Nacional, México D.F. 07738, Mexico
Get access

Abstract

The results of correlated electron paramagnetic resonance (EPR) and photoluminescence (PL) study of obliquely deposited porous SiOx films after step-by-step 15 min annealing within 105 min in vacuum at 950°C are presented. The low intensity symmetrical and featureless EPR line with a g-value g=2.0044 and a linewidth of 0.77 mT has been detected in as-sputtered films and attributed to dangling bonds (DB) of silicon atoms in amorphous SiOx domains with x=0.8. Successive annealing results in decreasing this line and the appearance of an intense EPR line with g=2.0025, linewidth of 0.11 mT and a hyperfine doublet with 1.6 mT splitting. According to the parameters this spectrum has been attributed to the EX center, a hole delocalized over four non-bridging oxygen atoms grouped around a Si vacancy in SiO2. The impact of chemical treatment before annealing and duration of anneals on the defect system, and a correlation of the PL intensity with decreasing of the DB EPR signal are discussed.

Keywords

LuminescenceSiEPR
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1617: Symposium 7E – Low-Dimensional Semiconductor Structures , 2013 , pp. 51 - 56
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Valakh, M. Ya., Yukhimchuk, V. A., Bratus’, V. Ya., Konchits, A. A., Hemment, P. L. F. and Komoda, T., J. Appl. Phys. 85, 168 (1999).CrossRefGoogle Scholar
Bratus’, V. Ya., Yukhimchuk, V. A., Berezhinsky, L. I., Valakh, M. Ya., Vorona, I. P., Indutnyi, I. Z., Petrenko, T. T., Shepeliavyi, P. E., Yanchuk, I. B., Fiz. Tekh. Poluprovodn., 35, 854 (2001) [Semiconductors 35, 821(2001)].Google Scholar
Rinnert, H., Vergant, M., Burneau, A., J. Appl. Phys. 89, 237 (2001).Google Scholar
Nesheva, D., Raptis, C., Perakis, A., Bivena, I., Aneva, Z., Levi, Z., Alexandrova, S., Hofmeister, H., J. Appl. Phys. 92, 4678 (2002).CrossRefGoogle Scholar
Boninelli, S., Iacona, F., Franzo, G., Bongiorno, C., Spinella, C., Priolo, F., J. Phys.: Condens. Matter 19, 225003 (2007).Google Scholar
Indutnyi, I.Z., Maidanchuk, I.Yu., Min’ko, V.I., Shepeliavyi, P.E., Dan’ko, V.A., J. Optoelectron. Adv. Mater. 7, 1231 (2005).Google Scholar
Indutnyi, I.Z., Michailovska, E.V., Shepeliavyi, P.E., Dan’ko, V.A., Fiz. Tekh. Poluprovodn., 44, 218 (2010) [Semiconductors 44, 206(2010)].Google Scholar
Indutnyi, I.Z., Maidanchuk, I.Yu., Min’ko, V.I., Shepeliavyi, P.E., Dan’ko, V.A., Fiz. Tekh. Poluprovodn., 41, 1265 (2007) [Semiconductors 41, 1255(2007)].Google Scholar
Dan’ko, V.A., Bratus’, V.Ya., Indutnyi, I.Z., Lisovskyi, I.P., Zlobin, S.O., Michailovska, K.V., Shepeliavyi, P.E., Semicond. Phys. Quant. Electronics & Optoelectronics 13, 413 (2010).Google Scholar
Fernandez, B.G., Lopez, M., Garcia, C., Perez-Rodriguez, A., Morante, J. R., Bonafos, C., Carrada, M., Claverie, A.. J. Appl. Phys. 91, 798 (2002).CrossRefGoogle Scholar
Holzenkampfer, E., Richter, F.-W., Stuke, J., Voget-Grote, U., J. Non-Cryst. Solids, 32, 327 (1979).CrossRefGoogle Scholar
Stesmans, A., Scheerlinck, F., Phys. Rev. B 50, 5204 (1994); J. Appl. Phys. 75, 1047(1994).Google Scholar
Jivanescu, M., Romanyuk, A., Stesmans, A., J. Appl. Phys. 107, 114307 (2010).CrossRefGoogle Scholar
Stesmans, A., Clemer, K., Afanas’ev, V.V., Phys. Rev. B 72, 155335 (2005).CrossRefGoogle Scholar
Lopes, M., Garrido, B. Garsia, C. Pellegrino, P., Pérez-Rodríguez, A., Morante, J. R., Bonafos, C., Carrada, M., Claverie, A., Appl. Phys. Lett. 80, 1637 (2002).Google Scholar
Indutnyy, I.Z., Lysenko, V.S., Maidanchuk, I.Yu., Min’ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan’ko, V.A., Semicond. Phys. Quant. Electronics & Optoelectronics 9, 9 (2006).Google Scholar