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Epitaxy of highly optical efficient GaN on O and Zn face ZnO

Published online by Cambridge University Press:  01 February 2011

Xing Gu ,
Michael A. Reshchikov ,
Lei He ,
Ali Teke ,
Feng Yun ,
Daniel K. Johnstone ,
Bill Nemeth ,
Jeff Nause  and
Hadis Morkoç
Xing Gu
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23220
Michael A. Reshchikov
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23220
Lei He
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23220
Ali Teke
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23220 Also with Balikesir University, Faculty of Art & Science, Department of Physics, 10100 Balikesir, Turkey
Feng Yun
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23220
Daniel K. Johnstone
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23220
Bill Nemeth
Affiliation:
Cermet, Inc., Atlanta, GA 30318
Jeff Nause
Affiliation:
Cermet, Inc., Atlanta, GA 30318
Hadis Morkoç
Affiliation:
Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23220
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Abstract

ZnO is a highly efficient photon emitter, has optical and piezoelectric properties that are attractive for a variety of applications. Due to its stacking order and close lattice to GaN, it is also considered as a substrate material for GaN epitaxy. In the past the poor preparation of ZnO surface has been a major handicap to GaN epitaxy. However, proper treatment we developed recently can make both faces of ZnO smooth with atomic level terraces. Epitaxy of GaN on O-face and Zn-face ZnO by reactive molecular beam epitaxy was performed. We used low-temperature RF growth of GaN buffer layer on ZnO surface to protect it from both ammonia and Ga. No Ga2ZnO4, an oxide with the spinel structure formed due to reaction of ZnO with Ga, was found, in contrast to earlier reports. The low-temperature photoluminescence (PL) indicates that both faces of ZnO can provide a high quality GaN with high radiative efficiency. In previous research it has been reported that O-face ZnO is slightly better for GaN epitaxy. Our new finding demonstrates that high-quality GaN epilayers can be grown on Zn face of ZnO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y9.1
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. “Properties, Processes and Applications of ZnO”, IEE Publishing House in London, UK. July, 2002, Ed by C. W. Litton, D. C. Reynolds, and T. CollinsGoogle Scholar
2. Thompson, G. H. B., Physics of Semiconductor Laser Devices (John Wiley & Sons, Chichester, p. 307, 1980).Google Scholar
3. Žukauskas, A., Shur, M. S., and Gaska, R., Introduction to Solid-State Lighting (John Wiley & Sons, New York, p. 75, 2002).Google Scholar
4. Sverdlov, B. N., Martin, G. A., and Morkoç, H., Smith, D. J., Appl. Phys. Lett. 67, 2063 (1995).Google Scholar
5. Hamdani, F., Yeadon, M., Smith, D. J., Tang, H., Kim, W., Salvador, A., Botchkarev, A. E., Gibson, J.M., Polyakov, A.Y., Skowronski, M., Morkoç, H., J. Appl. Phys. 83, 983 (1998).Google Scholar
6. Hamdani, F., Botchkarev, A., Kim, W., Morkoç, H., Yeadon, M., Gibson, J.M., Reynolds, D.C., Look, D.C., Evans, K., Litton, C.W., Mitchel, W.C., Hemenger, P., Appl. Phys. Lett. 70, 467 (1997).Google Scholar
7. Matsuoka, T., Yoshimoto, N., Sasaki, T., Katsui, A., Electron, J.. Mater. 21, 157 (1992). 157.Google Scholar
8. Hellman, E.S., Buchanan, D.N.E., Wiesmann, D., Brener, I., MRS Int. Nitride, J. Semicond. Res. 1, 16 (1996).Google Scholar
9. Hamdani, F., Botchkarev, A. E., Tang, H., Kim, W., Morkoç, H., Appl. Phys. Lett. 71, (1997).Google Scholar
10. Neugebauer, J. and Van de Walle, C. G., Appl. Phys. Lett. 69, 503 (1996).Google Scholar
11. Mattila, T. and Nieminen, R. M., Phys. Rev. B 55, 9571 (1997).Google Scholar
12. Elsner, J., Jones, R., Heggie, M. I., Sitch, P. K., Haugk, M., Frauenheim, Th., Öberg, S., and Briddon, P. R., Phys. Rev. B 58, 12571 (1998).Google Scholar
13. Northrup, J. E., Neugebauer, J., and Romano, L. T., Phys. Rev. Lett. 77, 103 (1996).Google Scholar