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Epitaxy of Erbium Doped LiNbO3 Films Produced by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

S. Bauer ,
L. Beckers ,
M. Fleuster ,
J. Schubert ,
W. Zander  and
Ch. Buchal
S. Bauer
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jülich, Germany
L. Beckers
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jülich, Germany
M. Fleuster
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jülich, Germany
J. Schubert
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jülich, Germany
W. Zander
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jülich, Germany
Ch. Buchal
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jülich, Germany
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Abstract

The growth of thin films of LiNbO3 and Er:LiNbO3 on LiNbO3 single crystals produced by pulsed laser deposition (PLD) was studied. Samples were characterized by RBS/Channeling Spectrometry, X-ray diffraction measurements, Secondary Ion Mass Spectroscopy (SIMS) and photoluminescence (PL) measurements. Film preparation is performed in a two-step process including deposition and in-situ-annealing. Buried Er doped layers of approx. 800 nm thickness were grown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 283
Copyright
Copyright © Materials Research Society 1994

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References

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