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Epitaxy and Chemical Reactions During Thin Film Formation from Low Energy Ions New Kinetic Pathways, New Phases and New Properties

Published online by Cambridge University Press:  25 February 2011

Nicole Herbots ,
O.C. Hellman  and
O. Vancauwenberghe
Nicole Herbots
Affiliation:
Arizona State University, Department of Physics and Astronomy, Tempe AZ 85287
O.C. Hellman
Affiliation:
Arizona State University, Department of Physics and Astronomy, Tempe AZ 85287
O. Vancauwenberghe
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science & Engineering, Cambridge, MA 02139
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Abstract

Three important effects of low energy direct Ion Beam Deposition (IBD) are the athermal incorporation of material into a substrate, the enhancement of atomic mobility in the subsurface, and the modification of growth kinetics it creates. All lead to a significant lowering of the temperature necessary to induce epitaxial growth and chemical reactions. The fundamental understanding and new applications of low temperature kinetics induced by low energy ions in thin film growth and surface processing of semiconductors are reviewed. It is shown that the mechanism of IBD growth can be understood and computed quantitatively using a simple model including ion induced defect generation and sputtering, elastic recombination, thermal diffusion, chemical reactivity, and desorption The energy, temperature and dose dependence of growth rate, epitaxy, and chemical reaction during IBD is found to be controlled by the net recombination rate of interstitials at the surface in the case of epitaxy and unreacted films, and by the balance between ion beam decomposition and phase formation induced by ion beam generated defects in the case of compound thin films. Recent systematic experiments on the formation of oxides and nitrides on Si, Ge/Si(100), heteroepitaxial SixGe1−x/Si(100) and GaAs(100) illustrate applications of this mechanism using IBD in the form of Ion Beam Nitridation (IBN), Ion Beam Oxidation (IBO) and Combined Ion and Molecular beam Deposition (CIMD). It is shown that these techniques enable (1) the formation of conventional phases in conditions never used before, (2) the control and creation of properties via new degrees of freedom such as ion energy and lowered substrate temperatures, and (3) the formation of new metastable heterostructures that cannot be grown by pure thermal means.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 287
Copyright
Copyright © Materials Research Society 1992

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References

[1] Vancauwenberghe, O. “On the growth of Semiconductor-based Epitaxial and Oxide Films from Low Energy Ion Beams, Ph.D. Thesis, Massachusetts Institute of Technology (1990).Google Scholar
[2] Vancauwenberghe, O., Hellman, O.C., to published in J. of Vac. Sci. and Tech. (1992).Google Scholar
[3] Hellman, O.C. “Ion Beam Nitridation of Si and Si-Ge”, Ph.D. Thesis, Massachusetts Institute of Technology (1990).Google Scholar
[4] Hellman, O.C., Herbots, N., Vancauwenberghe, O., Accepted for publication in Nucl. Instr. & Methods B (1992)Google Scholar
[5] Vancauwenberghe, O., Hellman, O.C., Herbots, N.. Appl. Phys. Lett. 59 (16)2031 (1991).Google Scholar
[6] Vancauwenberghe, O., Herbots, N., Manoharan, H., Ahrens, M., “Ion beam oxidation of GaAs: The role of ion energy”, J. Vac. Sci. Technol. A9, 1035 (1991).Google Scholar
[7] Herbots, N., Hellman, O.C., Cullen, P.A., Deposition and Growth: Limits for Microelectronics Ed Rubloff, G.W., AIP Vol. 167, 259 (1988).Google Scholar
[8] Herbots, N., Vancauwenberghe, O., Hellman, O.C. and Joo, Y.C., Nucl. Inst. and Meth., B59/60 326 (1991).Google Scholar
[9] Ed is the bulk displacement energy. Ref. [12] suggests that the surface Ed is about half that value. Ed 15 eV is taken here as an estimate for the lower energy boundary for significant ion penetration with the ability to create bulk defects, but depends on the specific ion-target.Google Scholar
[10] The BCA assumes a pair-like interaction with only two atoms interacting at any time.Google Scholar
[11] Vancauwenberghe, O., Herbots, N., Hellman, O.C., Proc. of the SPIE Growth of Semiconductor Structures and High Tc Thin Films on Semiconductors. 1285, 47 (1990).Google Scholar
[12] Brice, D.K., Tsao, J.Y. and Picraux, S. T.. Nucl. Inst. and Meth., B44 78 (1989)Google Scholar
[13] Dodson, B.W., Physical Review B36, 1068 (1987).Google Scholar
[14] Dodson, B.W., in Fundamentals of Beam-Solid Interactions and Transient Thermal Processing, ed. by Aziz, M.J., Rhen, L.E., Stritzker, B., Mat. Res. Soc. Symp. Proc. Vol. 100, 139 (1988).CrossRefGoogle Scholar
[15] Dodson, B.W., Processing and Characterization of Materials Using Ion Beams ed by Rehn, L.E., Greene, J.E., Schmidt, F.A., Mat. Res. Soc. Symp. Proc. Vol. 128, 137 (1989).Google Scholar
[16] Garrison, B.J., Miller, M.T., Brenner, D.W., Atomic Scale Calculations in Materials Science ed. Tersoff, J., Vanderbilt, D., Vitek, V., MRS Proc., vol. 141, 419 (1989).Google Scholar
[17] Landman, U., Ludetke, W.D., Ribarsky, M.W., J. Vac. Sci. Technol. A7, 2829 (1989).Google Scholar
[18] Armour, D.G., Fundamentals of Beam-Solid Interactions and Transient Thermal Processing ed. by Aziz, M.J., Rhen, L.E., Stritzker, B., MRS Proc. vol. 100, 127 (1988).Google Scholar
[19] Vancauwenberghe, O., Herbots, N., Hellman, O.C., J. Vac. Sci. Tech. B9 2027 (1991).CrossRefGoogle Scholar
[20] Gösele, U., Frank, W., Seeger, A., Solid State Communication 45, 31 (1983).Google Scholar
[21] Kitabatake, M., Fons, P., Greene, J.E., J. Vac. Sci. Technol. A9, 91 (1991).CrossRefGoogle Scholar
[22] Herbots, N., Vancauwenberghe, O., Hellman, O.C., Joo, Y. C.. Nucl. Instr. and Meth. B59/60, pp. 326–331 (1991).CrossRefGoogle Scholar
[23] Herbots, N., Appleton, B.R., Noggle, T.S., Pennycook, S.J., Zuhr, R.A., Zehner, D.M., in Semiconductor-Based Heterostructures: Interfacial Structure and Stability, ed. by Green, M.L., Baglin, J.E.E., Chin, G.Y., Deckman, H.W., Mayo, W., Narasinham, D., The Metallurgical Society, 335 (1986).Google Scholar
[24] Herbots, N., Appleton, B.R., Noggle, T.S., Zuhr, R.A., Pennycook, S.J., Nucl. Instrum. Meth. B13, 250 (1986).Google Scholar
[25] Benton, J.L., Michel, J., Kimberling, L.C., Weir, B.E., Gottscho, R.A., J. of Electronic Materials, Vol 20, p.643, (1991), and references therein.Google Scholar
[26] Orriman-Rossiter, K.G., Al-Bayati, A.H., Armour, D.G., Donnelly, S.E., Berg, J.A. van den, “Ion Beam Deposited Epitaxial Thin Silicon Films”, Nucl. Instrum. Meth. B59/60, 197 (1991).Google Scholar
[27] Hellman, O.C., Herbots, N., Vancauwenberghe, O., Culbertson, R.J., Croft, W.J.. Accepted for publication in J. of Vac. Sci. and Tech. (1992).Google Scholar
[28] Pennycook, S. J., unpublished data (1987).Google Scholar
[29] Augustus, P.D., Spiller, G.D.T., Dowsett, M.G., Kightley, P., Thomas, G.R., Webb, R., Clark, E.A., Secondary Ion Mass Spectrometry (SIMS VI) ed. by Benninghoven, A., Huber, A.M., Wemer, H.W., (Wiley, Chichester) p. 485 (1988).Google Scholar