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Epitaxially Grown N+ Phosphorus Collector Peaks In Highfrequency hbt's with Implanted Emitters

Published online by Cambridge University Press:  10 February 2011

C. C. G Visser ,
L. K. Nanver  and
A. Van Den Bogaard
C. C. G Visser
Affiliation:
Laboratory of ECTM, DIMES, Delft University of Technology, Feldmannweg 17, 2628 CB Delft, The Netherlands, [email protected]
L. K. Nanver
Affiliation:
Laboratory of ECTM, DIMES, Delft University of Technology, Feldmannweg 17, 2628 CB Delft, The Netherlands, [email protected]
A. Van Den Bogaard
Affiliation:
Laboratory of ECTM, DIMES, Delft University of Technology, Feldmannweg 17, 2628 CB Delft, The Netherlands, [email protected]
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Abstract

The boron out-diffusion into the Si collector of SiGe HBT's with implanted emitters is compensated by an epitaxially grown n+ phosphorus peak effectively positioned adjacent to the as-grown boron peak. Detrimental barrier formation is suppressed in devices with base sheet resistance 3.3 k.Ω and cut-off frequency of 31 GHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 105
Copyright
Copyright © Materials Research Society 1998

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References

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