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Epitaxial Tin Films on Sapphire and Silicon-on-Sapphire by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

R.D. Vispute ,
K. Dovidenko ,
K. Jagannadham  and
J. Narayan
R.D. Vispute
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
K. Dovidenko
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
K. Jagannadham
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
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Abstract

We have investigated epitaxial growth of TiN on sapphire and electronic grade silicon-on-sapphire (SOS) by PLD. A pulsed KrF excimer laser was used to ablate the stoichiometric TiN target in the deposition chamber maintained at a base pressure of 3xl0-7 Torr. Epitaxial growth was achieved at deposition temperatures of 500-700°C. The films were characterized by x-ray diffraction technique, Raman spectroscopy, high resolution electron transmission microscopy and four-point-probe electrical resistivity. The x-ray diffraction and TEM results showed that the TiN films deposited on sapphire (0001) and SOS above 500oC were single crystal in nature. The epitaxial relationship for TiN on sapphire was found to be TiN[1 1 1]||Al2O3[0001] and in-plane alignment of TiN[110]||Al2O3[1010]. In case of growth on SOS, epitaxy of TiN on Si was cube-on-cube and is similar to that of TiN grown on bulk Si substrates. Four-point-probe electrical resistivity measurements showed characteristic metallic behavior of these films as a function of temperature with the lowest value of resistivity of about 20-22μΩ-cm at room temperature. This paper describes the fundamental issues related to epitaxy, defect formation and nitride-oxide interfaces. It is also shown that the TiN films on sapphire and SOS have unique characteristics and are promising for metallization in advanced microelectronics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 271
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Narayan, J., Tiwari, P., Chen, X., Singh, J., Chowdhury, R., and Zheleva, T., Appl. Phys. Lett. 61,1290 (1992); US Patent granted # 5406123 (April 11,1995).Google Scholar
2 Savvides, N. and Window, B., J. Appl. Phys. 64, 225 (1988).Google Scholar
3 Vispute, R.D., Chowdhury, R., Tiwari, P. and Narayan, J., Appl. Phys. Lett. 65, 2565 (1994).Google Scholar
4 Petrov, I., Mojab, E., Powell, R.C., Greene, J.E., Hultman, L. and Sundgren, J.-E., Appl. Phys. Lett. 60, 2491 (1992).Google Scholar
5 Chowdhury, R., Chen, X. and Narayan, J., Appl. Phys. Lett. 64, 1236 (1994).Google Scholar
6 Vispute, R.D., Wu, H. and Narayan, J., Appl. Phys. Lett. 67, 1549 (1995).Google Scholar
7 Lee, Myung-Bok, Kawasaki, M., Yoshimoto, M., and Koinuma, H., Appl. Phys. Lett. 66, 1331 (1995).Google Scholar
8 Li, D., Chu, X., Cheng, S.C., Lin, X. W., Dravid, V.P., Chung, Y.W., Wong, M.S., Sproul, W. D., Appl. Phys. Lett. 67, 203 (1995).Google Scholar
9 Sandhu, G.S., Meikle, S.G. and Doan, T.T., Appl. Phys. Lett. 62, 240 (1993).Google Scholar
10 Tsai, W., Delfino, M., Fair, J.A. and Hodul, D., J. Appl. Phys. 73, 4462 (1993).Google Scholar
11 Biunno, N., Narayan, J., Srivatsa, A.R. and Holland, O.W., Appl. Phys. Lett. 55, 405(1989).Google Scholar
12 Ruffner, J. A., Slaughter, J.M. and Falco, C.M., Appl. Phys. Lett. 60, 2995 (1992); D.K. Fork et al. AppL Phys. Lett. 58, 2432 (1991).Google Scholar
13 Spengler, W., Kaiser, R., Christensen, A.N. and MuUer-Vogt, G., Phys. Rev. B 17, 1095 (1978).Google Scholar
14 Zheleva, T., Jagannadham, K. and Narayan, J., J. Appl. Phys. 75, 860 (1994).Google Scholar
15 Johansson, B.O., Sundgren, J.-E., Greene, J.E., Rockett, A. and Barnett, S.A., J. Vac. Sci. Technol. A 3, 303 (1985).Google Scholar