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Epitaxial Layers Si:(Sn,Yb) Produced by The Crystallization From The Melt-Solution On The Basis Of Sn.

Published online by Cambridge University Press:  21 February 2011

D.I. Brinkevich ,
N.M. Kazuchits  and
V.V. Petrov
D.I. Brinkevich
Affiliation:
Department of Physics.Belorussian State University. Minsk, Republic Belarus
N.M. Kazuchits
Affiliation:
Department of Physics.Belorussian State University. Minsk, Republic Belarus
V.V. Petrov
Affiliation:
Department of Physics.Belorussian State University. Minsk, Republic Belarus
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Abstract

Epitaxial layers (EL) Si:Sn doped with Yb in the process of liquid phase epitaxy were studied by optical microscopy and photoluminescence (PL) methods.At low concentration of lanthanoid (0,01 < Nyb < 0,1 weight %) the good planarity of the interface and high quality of the surface are detected. At NYb > 0,1 weight % microirregularities are presented.

In EL Si:(Sn, Yb) irradiated by 4,5 MeV-electrons the suppression of the generation of radiaton defects, responsible for G- and C-lines of PL, has been found. This effect has been explainedwithin the score of the model takeng into the consideration gettering propering ofYb in reference to the impurities of 0 and 0 as deformation fields, attributed to the presence of Sn atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 79
Copyright
Copyright © Materials Research Society 1993

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References

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