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Epitaxial Layers Si: (Sn,Yb) Produced by the Crystallization From the Melt-Solution on the Basis of Sn.

Published online by Cambridge University Press:  25 February 2011

D.I. Brinkevich ,
N.M. Kazuchits  and
V.V. Petrov
D.I. Brinkevich
Affiliation:
Department of Physics.Belorussian State University. Minsk, Republic Belarus
N.M. Kazuchits
Affiliation:
Department of Physics.Belorussian State University. Minsk, Republic Belarus
V.V. Petrov
Affiliation:
Department of Physics.Belorussian State University. Minsk, Republic Belarus
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Abstract

Epitaxial layers (EL) Si:Sn doped with Yb in the process of liquid phase epitaxy were studied by optical microscopy and photoluminescence (PL) methods.At low concentration of lanthanoid (0,01 < Nyb > 0,1 weight %) the good planarity of the interface and high quality of the surface are detected. At NYb > 0,1 weight % microirregularities are presented.

In EL Si:(Sn, Yb) irradiated by 4,5 MeV-electrons the suppression of the generation of radiaton defects, responsible for G– and C-lines of PL, has been found. This effect has been explainedwithin the score of the model takeng into the consideration gettering propering ofYb in reference to the impurities of 0 and C as deformation fields, attributed to the presence of Sn atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 409
Copyright
Copyright © Materials Research Society 1993

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References

1. Alimov, O.M., Petrov, V.V., Kharchenko, T.D. and Yavid, V. Yu., Fiz. Tekh. Poluprovodn. 26,1914 (1992).Google Scholar
2. Karpov, Yu.A., Petrov, V.V., Prosolovich, V.S. and Tkachev, V.D., Fiz. Tekh. Poluprovodn. 17,1530 (1983)Google Scholar
3. Drozdov, N.A., Patrin, A.A., and Tkachev, V.D., Pisma ZhETF,23, 651 (1976)Google Scholar
4. Osipjan, Yu.A., Rtishchev, A.M. and Steinman, E.A., Fiz.tverd.tela, 26,1772 (1984)Google Scholar
5. Safronov, L.N.,Radiation Effects in Semiconductors,(Nauka, Moskow, 1979-in Russian), p.101 Google Scholar
6. Solpovjova, E.V., Lazareva, G.V., Leiferov, B.M. et al. , Fiz. Tekh. Poluprovodn. 18,1573 (1984)Google Scholar