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Epitaxial Lateral Overgrowth of Silicon on SiO2 Investigated by X-Ray Topography

Published online by Cambridge University Press:  25 February 2011

B. Jenichen ,
R. Köhler ,
N. Nagel ,
R. Bergmann  and
E. Bauser
B. Jenichen
Affiliation:
Paul—Drude—lnstitut for Festkörperelektronik, Hausvogteiplatz 5–7, 1086 Berlin, Germany
R. Köhler
Affiliation:
Max—Planck—Gruppe für Röntgenbeugung, Hausvogteiplatz 5—7, 1086 Berlin, Germany
N. Nagel
Affiliation:
MPI für Festkrperforschung, Heisenbergstr.1, 7000 Stuttgart, Germany
R. Bergmann
Affiliation:
MPI für Festkrperforschung, Heisenbergstr.1, 7000 Stuttgart, Germany
E. Bauser
Affiliation:
MPI für Festkrperforschung, Heisenbergstr.1, 7000 Stuttgart, Germany
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Abstract

Silicon lamellae grown laterally over silicon dioxide by liquid phase epitaxy are investigated using X-ray double crystal topography. The lamellae are grown from Indium solution. All of the lamellae show growth striations with indium concentration differences of about 1016...4x1017 cm−3 Overgrowth widths up to 320μm are obtained on sides of the seeding window by growth under conditions of low supersaturation. Facetting of the lamella edges then becomes less pronounced and, therefore,striations are detected farther away from the windows.

About 60% of the lamellae are free of crystallographic defects. In the defective lamellae single dislocations parallel to the sample surface are detected. They extend between seeding window edges and re—entrant corners at the lamella edges. Dislocations probably form during the cooling process due to strains near the edges of the seeding windows, and as a result of indium incorporation in high concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 215
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Bergmann, R., J. Cryst. Growth 110, 823 (1991)Google Scholar
[2] Jastrebski, L., J. Cryst. Growth 63 493 (1983)Google Scholar
[3] Friedrich, J., Neudeck, G.W., and Liu, S.T., J.Phys.Coloq.(Paris) C4, Suppl. 9, 4.9, C4–71 (1988)Google Scholar
[4] Bergmann, R., Bauser, E., and Werner, J.H., Appl.Phys. Letters 57, 351 (1990)Google Scholar
[5] Banhart, F., Bergmann, R., Phillipp, F., and Bauser, E., Applied Physics A53, 317 (1991)Google Scholar
[6] Köhler, R., Jenichen, B., Bauser, E., and Bergmann, R. to be publ. in J. Appl. Phys.Google Scholar
[7] Jenichen, B., Köhler, R., Möhling, W., J.Phys. E21, 1062(1988)Google Scholar
[8] Bonse, U., Hartmann, I., Z.f.Krist. 156, 265 (1981)Google Scholar
[9] Phillip, H.R. and Taft, E.A., Phys. Rev. 120, 37 (1960)Google Scholar
[10] Backenstoss, G., Phys. Rev. 108, 416 (1957)Google Scholar
[11] Cogan, D. de, Silicon, EMIS Datareview 1987, p.390 Google Scholar