Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-23T13:54:37.891Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth on 2° Off-axis 4H SiC Substrates with Addition of HCl

Published online by Cambridge University Press:  01 February 2011

Jie Zhang ,
Swapna Sunkari ,
Janice Mazzola ,
Becky Tyrrell ,
Gray Stewart ,
R Stahlbush ,
J Caldwell ,
P Klein ,
Michael Mazzola  and
Janna Casady
Jie Zhang
Affiliation:
[email protected], SemiSouth Laboratories, R & D, 201 Research Boulevard, Starkville, MS, 39759, United States
Swapna Sunkari
Affiliation:
[email protected], SemiSouth Laboratories, 201 Research Boulevard, Starkville, MS, 39759, United States
Janice Mazzola
Affiliation:
[email protected], SemiSouth Laboratories, 201 Research Boulevard, Starkville, MS, 39759, United States
Becky Tyrrell
Affiliation:
[email protected], SemiSouth Laboratories, 201 Research Boulevard, Starkville, MS, 39759, United States
Gray Stewart
Affiliation:
[email protected], SemiSouth Laboratories, 201 Research Boulevard, Starkville, MS, 39759, United States
R Stahlbush
Affiliation:
[email protected], Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC, 20375, United States
J Caldwell
Affiliation:
[email protected], Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC, 20375, United States
P Klein
Affiliation:
[email protected], Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC, 20375, United States
Michael Mazzola
Affiliation:
[email protected], Mississippi State University, Department of Electrical and Computer Engineering,, Starkville, MS, 39762, United States
Janna Casady
Affiliation:
[email protected], SemiSouth Laboratories, 201 Research Boulevard, Starkville, MS, 39759, United States
Get access

Abstract

Epitaxial growth on 3-in, 2° off-axis 4H SiC substrates has been conducted in a horizontal hot-wall CVD reactor with HCl addition. The thickness of the epiwafers ranges from 3m to 11 m and the growth rate is 7 − 7.5 m/h. Although a rougher surface and a higher triangular defect density is observed using the standard process for 4° growth, an improved process has resulted in reduced triangular defect density down to around 4 cm−2 and a smoother surface with the roughness of 1.1 nm for a 3.7 m thick epiwafer. Most interestingly, the basal plane dislocation density in the 2° off-axis epiwafers has been reduced to "negligible" levels, as confirmed by both the non-destructive UVPL mapping technique and the molten KOH etching on 2° epiwafers with thickness of around 10 m.

Keywords

morphologyepitaxychemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D07-10
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Bergman, J.P., ICSCRM 2007 abstract MO1-1Google Scholar
[2] Zhang, J., Mazzola, J., Sunkari, S., Stewart, G., Klien, P.B., Ward, R., Glaser, E., Lew, K.K., Gaskil, D.K., Sankin, I., Bondarenko, V., Null, D., Sheridan, D., and Mazzola, M., presented at ICSCRM2007, 2007 Google Scholar
[3] Stahlbush, R.E., Liu, K.X., Zhang, Q., and Sumakeris, J.J., Materials Science Forum Vols. 556-557 (2007), pp. 295.Google Scholar
[4] Nakamura, et al., Materials Science Forum Vols. 457-460 (2004), pp. 163–168.Google Scholar