Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-06T09:12:57.522Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of ZnTe and ZnSe on GaAs by Pulsed Laser Deposition

Published online by Cambridge University Press:  25 February 2011

Y. Rajakarunanayake ,
Y. Luo ,
A. Aydinli ,
N Lavalle  and
A. Compaan
Y. Rajakarunanayake
Affiliation:
Department of Physics and Astronomy, Univ. of Toledo, Toledo, OH 43606
Y. Luo
Affiliation:
Department of Physics and Astronomy, Univ. of Toledo, Toledo, OH 43606
A. Aydinli
Affiliation:
Department of Physics and Astronomy, Univ. of Toledo, Toledo, OH 43606
N Lavalle
Affiliation:
Department of Physics and Astronomy, Univ. of Toledo, Toledo, OH 43606
A. Compaan
Affiliation:
Department of Physics and Astronomy, Univ. of Toledo, Toledo, OH 43606
Get access

Abstract

We report the successful growth of ZnTe and ZnSe epitaxial layers on GaAs by pulsed laser deposition. A frequency doubled Nd:YAG laser was used to ablate/evaporate II-VI bulk targets and pressed powder targets in an ultra high vacuum enclosure. For typical growth temperatures in the range 200°-400°C x-ray analysis of the layers revealed sharp <100> peaks with no evidence of growth in other orientations. Polarization dependent Raman spectroscopy was also used to further characterize the epitaxial layers, by verifying the selection rules for backscattering from <100> oriented films. The low temperature photoluminescence spectra show distinct near-band-edge features indicating high crystalline quality. The photoluminescence of the films grown from bulk targets was superior to that of films grown from pressed powder targets, indicating that the use of high purity bulk targets is critical. Our results indicate that pulsed laser deposition is a promising new growth technique for the fabrication of II-VI epitaxial layers with unique advantages.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 229
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Yao, T., Makita, Y., and Maekawa, S., J. Cryst. Growth 45, 309 (1978); Y. Rajakarunanayake, B.H. Cole, J.O. McCaldin, D.H. Chow, J.R. Siderstrom, and T.C. McGill, Appl. Phys. Lett. 55, 1217 (1989).Google Scholar
[2] Yang, X. H., Hays, J., Shan, W., Song, J. J., Cantwell, E. and Aldridge, J., Appl. Phys. Lett 59, 1681 (1991).Google Scholar
[3] Cheung, J. T. and Cheung, D. T., J. Vac. Sci. Technol. 21, 182 (1982).CrossRefGoogle Scholar
[4] Wrobel, J. M. and Dobowski, J. J., Appl. Phys. Lett. 55, 469 (1989); J. J. Dobowski, D. F. Williams, P. B. Sewell and P. Norman, Appl. Phys. Lett. 46, 1081 (1985).CrossRefGoogle Scholar
[5] Wu, X. D., Inam, A., Venkatesan, T., Chang, C. C., Chase, E. W., Barboux, P., Tarascon, J. M., and Wilkens, B., Appl. Phys. Lett. 52, 754 (1988); D. Dijkkamp, T. Venkatesan, X. D. Wu, S. A. Shaheen, N. Jisrawi, Y. H. Minlee, W. L. McLean, and M. Croft, Appl. Phys. Lett. 51, 619 (1987).Google Scholar
[6] Namild, A., Watabe, K., Fukano, H., Nishigaki, S., and Noda, T., J. Appl. Phys. 54(6), 3443, (1983); R. K. Singh and J. Narayan, Phys. Rev. B 41(13), 8843, (1990); S. Tomoda, I. Kusunoki, and S. Matsumoto, Mass Spectros. 23, 133 (1975).Google Scholar
[7] Kwok, H. S., Zheng, J. P., Witanachchi, S., Shi, L. and Shaw, D. T., Appl. Phys. Lett. 52, 1815 (1988); H. S. Kwok, J. P. Zheng, S. Witanachchi, P. Mattocks, L. Shi, Q. Y. Ying, X. W. Wang and D. T. Shaw, Appl. Phys. Lett 52, 1095 (1988).CrossRefGoogle Scholar
[8] Aydinli, A., Puente, G. Contreras, Bhat, A., Compaan, A. and Chan, A., J. Vac. Sci. Tchnol. A9(6), 3031 (1991); A. Compaan, A. Bhat, C. Tabory, S. Liu, M. Nguyen, A. Aydinli, L. H. Tsien, and R. G. Bohn, Solar Cells 30, 79 (1991).Google Scholar
[8] Aydinli, A., G. Contreras Puente, Bhat, A., Compaan, A. and Chan, A., J. Vac. Sci. Technol. A9(6), 3031, (1991).Google Scholar
[9] Matthews, J. W. and Blakeslee, A. E., J. Cryst. Growth 27, 118 (1974).Google Scholar
[10] Gutowski, J., Presser, N., and Kudlek, G., Phys. Stat. Sol. (a)120, 11 (1990).CrossRefGoogle Scholar