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EPITAXIAL GROWTH OF ZIRCONIA AND YTTRIA STABILIZED ZIRCONIA FILMS ON SAPPHIRE SUBSTRATES BY REACTIVE SPUTTERING

Published online by Cambridge University Press:  28 February 2011

F. KONUSHI ,
T. DOI ,
H. MATSUNAGA ,
Y. KAKIHARA ,
M. KOBA ,
K. AWANE  and
I. NAKAMURA
F. KONUSHI
Affiliation:
Central Research Laboratories, SHARP Corporation, Tenri, Nara, Japan
T. DOI
Affiliation:
Central Research Laboratories, SHARP Corporation, Tenri, Nara, Japan
H. MATSUNAGA
Affiliation:
Central Research Laboratories, SHARP Corporation, Tenri, Nara, Japan
Y. KAKIHARA
Affiliation:
Central Research Laboratories, SHARP Corporation, Tenri, Nara, Japan
M. KOBA
Affiliation:
Central Research Laboratories, SHARP Corporation, Tenri, Nara, Japan
K. AWANE
Affiliation:
Central Research Laboratories, SHARP Corporation, Tenri, Nara, Japan
I. NAKAMURA
Affiliation:
Central Research Laboratories, SHARP Corporation, Tenri, Nara, Japan
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Abstract

Epitaxial single crystal growth of zirconia (ZrO2) and yttria stabilized zirconia (ZrO2 ·Y2O3) films on sapphire substrates was achieved for the first time by using reactive sputtering. And the relations of crystallographic orientations between the epitaxial films and sapphire substrates was determined. Yttria stabilized zirconia films seem to offer hiah quality SOI substrates, since the crystal structure of ZrO2·Y2O3 is cubic fluorite and its lattice constant is closely matched to those of semiconductors such as Si and GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 259
Copyright
Copyright © Materials Research Society 1986

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References

1. Golecki, I., Manasevit, H.M., L.A.Moudy, Yang, J.J. and Mee, J.E., Appl.Phys.Lett.42, 501,(1983)Google Scholar
2.To be publishedGoogle Scholar