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Epitaxial Growth of Spinel Ferrite Oxide (Al,Ru,Fe)3O4 on a GaAs(001) Substrate Using a MgO Buffer Layer

Published online by Cambridge University Press:  01 February 2011

Teruo Kanki
Affiliation:
[email protected], Osaka University, The Institute of Scientific and Industrial Research, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan, +81-6-6879-8488, +81-6-6879-8488
Toshio Kawahara
Affiliation:
[email protected], Osaka University, Institute of Scientific and Industrial Research, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
Naoki Asakawa
Affiliation:
[email protected], Osaka University, Institute of Scientific and Industrial Research, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
Yasushi Hotta
Affiliation:
[email protected], Osaka University, Institute of Scientific and Industrial Research, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
Yoshikazu Terai
Affiliation:
[email protected], Osaka University, Graduate School of Engineering, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
Yasufumi Fujiwara
Affiliation:
[email protected], Osaka University, Graduate School of Engineering, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
Hitoshi Tabata
Affiliation:
[email protected], The University of Tokyo, Graduate School of Engineering, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
Tomoji Kawai
Affiliation:
[email protected], Osaka University, Institute of Scientific and Industrial Research, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
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Abstract

Spinel ferrite oxides doping non-magnetic ions show the photo-induced magnetization (PIM) effect at high temperature [1-3]. Such a magnetization enhancement by light irradiation is a unique property in this material. In order effectively to use the PIM effect and precisely to control the magnetism, direct light-emission from light-emitting element substrates would be a useful technique. In this study, spinel ferrite Al0.2Ru0.8Fe2O4 (ARFO) thin films, with the high temperature PIM effect, were prepared on GaAs(001) substrates by a pulsed laser deposition technique to aim integration with light-emitting devices based on GaAs lattice-matched materials in the future. Results showed that (001)-oriented ARFO thin films were successfully grown by using MgO buffer layers. The magnetic properties were approximately the same as ARFO films using other substrates such as Al2O3(0001) or MgO(001).

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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