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Epitaxial Growth of SiC in a Vertical Multi-Wafer CVD System: Already Suited as Production Process?

Published online by Cambridge University Press:  10 February 2011

Roland Rupp ,
Christian Hecht ,
Arno Wiedenhofer  and
Dietrich Stephani
Roland Rupp
Affiliation:
Siemens AG,Semiconductor Components Group, HL PS E SiC, D-80312 Munich, Germany
Christian Hecht
Affiliation:
Siemens AG, Corporate Technology, Department ZT EN, Box 3220, D-91050 Erlangen, Germany
Arno Wiedenhofer
Affiliation:
Siemens AG, Corporate Technology, Department ZT EN, Box 3220, D-91050 Erlangen, Germany
Dietrich Stephani
Affiliation:
Siemens AG, Corporate Technology, Department ZT EN, Box 3220, D-91050 Erlangen, Germany
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Abstract

Results about a new CVD system suited for epitaxial growth on six 2 inch SiC-wafers at a time are presented. Excellent gas flow stability is achieved for this new reactor type as shown by in- situ observations of the gas flow dynamics in the reactor chamber. These experimental results agree favorably with numerical process simulation results.

The epitaxial layers grown in the multi-wafer system so far show a by an order of magnitude higher background impurity level (≤1015 cm−3) as reported previously for layers grown in single-wafer systems by the authors and other groups (≤ 1014 cm−3). On the other hand, the doping homogeneity achieved until today is very encouraging. The variation on a 2 inch wafer is less than ± 20% at about 1*1016 cm−3. The wafer to wafer variation of the average doping value both within a run and from run to run is within 15 %. The reproducibility and uniformity of the layer thickness is even better (total thickness variation ≤5% on a 2 inch wafer). The surface of the epitaxial layers is very smooth with a typical growth step height of 0.5 nm (4H, 8° off orientation). First measurements on Schottky diodes build on these layers show low leakage current values indicating low point defect density in the epitaxial layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 149
Copyright
Copyright © Materials Research Society 1999

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References

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