Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T07:25:28.340Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of Rare Earth Silicides on (111)Si

Published online by Cambridge University Press:  15 February 2011

T. L. Lee ,
W. D. Sue ,
J. H. Lin ,
C. H. Luo  and
L. J. Chen
T. L. Lee
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
W. D. Sue
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
J. H. Lin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
C. H. Luo
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Get access

Abstract

Epitaxial YSi2-x, TbSi2-x, and ErSi2-x. have been grown on (111)Si by solid phase epitaxy in ultrahigh vacuum deposited rare earth (RE) metal thin films on silicon. The evolution of vacancy ordering and defect structure in epitaxial RE silicide thin films on (111)Si have been studied by both conventional and high resolution transmission electron microscopy.

Additional superlattice spots located at 1/3 <2110> in the diffraction pattern of RESi2-x, are attributed to the formation of ordered vacancy in the Si sublattice planes. The splitting of extra diffraction spots is correlated to the formation of an out-of--step structure. Streakings of the split diffraction spots in the diffraction pattern are attributed to the presence of an out-of-step structure with a range of M values. For YSi2-x and ErSi2-x, the M was found to settle down to a constant value after high temperature and/or long time annealing. For TbSi2-x, M is equal to 5 throughout the annealing.

Planar defects in RESi2-x films were analyzed to be stacking faults on {1010} planes with 1/6<1213> displacement vectors. The size and density of stacking faults were found to increase and decrease, respectively, with annealing temperature and/or annealing time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 125
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tu, K.N., Thompson, R.D., and Tsaur, B.Y., Appl. Phys. Lett. 38, 626 (1981).CrossRefGoogle Scholar
2. Norde, H., Pires, J. deSousa, d'Heurle, F., Pesavento, F., Petersson, S., and Tove, P.A., Appl. Phys. Lett. 38, 865 (1981).Google Scholar
3. Janega, P.L., McCaffrey, I., and Landheer, D., Appl. Phys. Lett. 55, 1415 (1989).Google Scholar
4. Knapp, J.A. and Picraux, S.T., Appl. Phys. Lett. 48, 466 (1986).Google Scholar
5. d'Avitaya, F.A., Perio, A., Oberlin, J.-C., Campidelli, Y., and Chroboczek, J.A., Appl. Phys. Lett. 54, 2198 (1989).CrossRefGoogle Scholar
6. Madar, R., Houssay, E., Rouault, A., Senateur, J.P., Lambert, B., d'Anterroches, C.M., Pierre, J., Laborde, O., Soubeyroux, J.L., and Pelissier, J., J. Mater. Res. 5, 2126 (1990).CrossRefGoogle Scholar
7. Chen, L.J. and Tu, K.N., Mater. Sci. Reports 6, 53 (1991)CrossRefGoogle Scholar
8. Baglin, J.E.E., d'Heurle, F.M., and Petersson, C.S., J. Appl. Phys. 52, 2841 (1981)CrossRefGoogle Scholar
9. Knapp, J.A. and Picraux, S.T., Mater. Res. Symp. Proc. 54, 261 (1986).Google Scholar
10. Baptist, R., Ferrer, S., Grenet, G., and Poon, H.C., Phys. Rev. Lett. 64 311 (1990).Google Scholar
11. Sato, R., Doi, H., Ishi, B., and Uchikoshi, H., Acta Cryst. 14, 763 (1961).Google Scholar
12. Watanabe, D., Hirabayashi, M., and Ogawa, S., Acta Cryst. 8, 510 (1955).Google Scholar
13. Fujiwara, K., Hirabayashi, M., Watanabe, D. and Ogawa, S., J. Phys. Soc. Japan, 13, 167 (1958).CrossRefGoogle Scholar
14. Ogawa, S. and Watanabe, D., Acta Cryst. 11, 872 (1958).CrossRefGoogle Scholar
15. Stowell, M.J., in Epitaxial Growth, edited by J.W. Mattews, (Academic Press, New York, 1075) p. 437.Google Scholar
16. Baglin, J.E.E., d'Heurle, F.M., and Petersson, C.S., Appl. Phys. Lett, 36, 594 (1980).Google Scholar