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Epitaxial Growth of Atomically Flat Spin Dependent Tunneling Junctions

Published online by Cambridge University Press:  10 February 2011

Y. Li ,
S. X. Wang ,
F. B. Mancoff  and
B. M. Clemens
Y. Li
Affiliation:
Department of Material Science and Engineering, Stanford University, Stanford, CA 94305
S. X. Wang
Affiliation:
Department of Material Science and Engineering, Stanford University, Stanford, CA 94305
F. B. Mancoff
Affiliation:
Department of Material Science and Engineering, Stanford University, Stanford, CA 94305
B. M. Clemens
Affiliation:
Department of Material Science and Engineering, Stanford University, Stanford, CA 94305
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Abstract

Spin dependent tunneling junctions with epitaxially grown underlayers have been investigated to examine the possibility of achieving very flat and uniform barrier layers. Pt/Ni80Fe20 /Fe50Mn50/Ni80Fe20layers were deposited on sapphire (0001) substrates at different temperatures and monitored by in-situ reflection high energy electron diffraction (RHEED). The surface morphology has been found to depend strongly on the growth temperature. X-ray diffraction and magnetic hysteresis loop measurements were also performed to characterize the film structures

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 73
Copyright
Copyright © Materials Research Society 1999

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References

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