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Epitaxial Growth of γ -Al2O3 Insulator Films on Si by Molecular Beam Epitaxy Using an Al Solid Source and N2O Gas

Published online by Cambridge University Press:  15 February 2011

H. Wado ,
T. Shimizu ,
K. Ohtani ,
Y. C. Jung  and
M. Ishida
H. Wado
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tempaku-cho, Toyohashi 441, Japan
T. Shimizu
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tempaku-cho, Toyohashi 441, Japan
K. Ohtani
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tempaku-cho, Toyohashi 441, Japan
Y. C. Jung
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tempaku-cho, Toyohashi 441, Japan
M. Ishida
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tempaku-cho, Toyohashi 441, Japan
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Abstract

High quality crystalline γ -Al2O3 films were epitaxially grown on Si(111) substrates at growth temperatures from 750 to 900°C by molecular beam epitaxy using an Al solid source and N2O gas. Very thin γ -Al2O3 films grown at a growth temperature of 850°C showed streaky reflection high-energy electron diffraction patterns. By in situ x-ray photoelectron spectroscopy measurements, carbon contamination, as is seen in the films grown with a Al(CH3)3 source, was not detected within the measurement sensitivity. The stoichiometry of the grown film was found to be similar to that of Al2O3. Growth rates of epitaxial γ -Al2O3 layers decreased with increasing growth temperatures. The predominant growth of the γ -Al2O3(111) crystal orientation was confirmed on Si(110) and Si(100) substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 39
Copyright
Copyright © Materials Research Society 1996

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