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Epitaxial Growth in Large Lattice Mismatch Systems: Characteristics of Domain Epitaxy

Published online by Cambridge University Press:  25 February 2011

Tsvetanka S. Zheleva ,
K. Jagannadham  and
J. Narayan
Tsvetanka S. Zheleva
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
K. Jagannadham
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
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Abstract

The characteristics of epitaxial growth in large lattice mismatch TiN/Si and TiN/GaAs systems are analyzed. The epitaxial growth in these large mismatch systems is modelled in terms of various energy contributions to the epilayer. The new mode of growth, defined as domain epitaxial growth in these high mismatch systems is maintained by the formation of misfit dislocations at repeated intervals. The epitaxial relationship within the domain consists of n interplanar distances of the overlayer film closely matching with m interplanar distances of the substrate, where m and n are integers. The interfacial energy is found to be a very important term in determining the orientation relationships. The results of the model calculations are compared with the experimental observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 393
Copyright
Copyright © Materials Research Society 1993

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References

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