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Epitaxial Growth for Solar-Blind AlGaN Photodetector Imaging Arrays by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  11 February 2011

Uttiya Chowdhury ,
Charles J. Collins ,
Michael M. Wong ,
Ting Gang Zhu ,
Jonathan C. Denyszyn ,
Jin Ho Choi ,
Bo Yang ,
Joe C. Campbell  and
Russell D. Dupuis
Uttiya Chowdhury
Affiliation:
10100 Burnet Road, Building 160, Austin, TX 78758USAPhone: +1–512–471–0537, Fax: +1–512–471–0957, e-mail: [email protected]
Charles J. Collins
Affiliation:
10100 Burnet Road, Building 160, Austin, TX 78758USAPhone: +1–512–471–0537, Fax: +1–512–471–0957, e-mail: [email protected]
Michael M. Wong
Affiliation:
10100 Burnet Road, Building 160, Austin, TX 78758USAPhone: +1–512–471–0537, Fax: +1–512–471–0957, e-mail: [email protected]
Ting Gang Zhu
Affiliation:
10100 Burnet Road, Building 160, Austin, TX 78758USAPhone: +1–512–471–0537, Fax: +1–512–471–0957, e-mail: [email protected]
Jonathan C. Denyszyn
Affiliation:
10100 Burnet Road, Building 160, Austin, TX 78758USAPhone: +1–512–471–0537, Fax: +1–512–471–0957, e-mail: [email protected]
Jin Ho Choi
Affiliation:
10100 Burnet Road, Building 160, Austin, TX 78758USAPhone: +1–512–471–0537, Fax: +1–512–471–0957, e-mail: [email protected]
Bo Yang
Affiliation:
10100 Burnet Road, Building 160, Austin, TX 78758USAPhone: +1–512–471–0537, Fax: +1–512–471–0957, e-mail: [email protected]
Joe C. Campbell
Affiliation:
10100 Burnet Road, Building 160, Austin, TX 78758USAPhone: +1–512–471–0537, Fax: +1–512–471–0957, e-mail: [email protected]
Russell D. Dupuis
Affiliation:
10100 Burnet Road, Building 160, Austin, TX 78758USAPhone: +1–512–471–0537, Fax: +1–512–471–0957, e-mail: [email protected]
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Abstract

Solar-blind imaging arrays based on AlGaN p-i-n structures are of high interest for defense applications. We have studied the material issues involved in development of such imaging arrays and have developed discrete photodetector devices with a high external quantum efficiency (EQE) and imaging arrays of high operability.

For the discrete devices, a record EQE of 58.1% peaking at 274 nm under zero volt bias was obtained without using an anti-reflecting (AR) coating. The EQE was seen to have a slight voltage dependence: going up to 64.5% at –5V reverse bias. The responsivity had a drop-off by one order of magnitude for a wavelength change of 4 nm on both the shorter and longer wavelength side. The material quality and uniformity was found to be very good leading to the development of 256 × 256 arrays. A high yield along with uniform, high EQE was obtained for the detector devices in the array leading to a high operability of 99.8%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L7.9
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] Chowdhury, U., Wong, M. M., Collins, C. J., Yang, B., Denyszyn, J. C., Campbell, J. C., and Dupuis, R. D., accepted for publication in J. Cryst. Growth. Google Scholar