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Epitaxial Growth and Recovery: an Analytic Approach

Published online by Cambridge University Press:  21 February 2011

A. Zangwillt ,
C. N. Luset ,
D. D. Vvedensky  and
M. R. Wilby
A. Zangwillt
Affiliation:
school of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
C. N. Luset
Affiliation:
school of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332
D. D. Vvedensky
Affiliation:
The Blackett Laboratory, Imperial College, London SW7 2BZ, UK
M. R. Wilby
Affiliation:
The Blackett Laboratory, Imperial College, London SW7 2BZ, UK
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Abstract

Most detailed studies of morphological evolution during epitaxial growth and recovery make use of computer-based simulation techniques. In this paper, we discuss an alternative, analytic approach to this problem which takes explicit account of the atomistically random processes of deposition and surface diffusion. Beginning with a master equation representation of the dynamics of a solid-on-solid model of epitaxial growth, we derive a discrete, stochastic equation of motion for the surface profile. This Langevin equation is appropriate for growth studies. In particular, we are able to provide a microscopic justification for a non-linear continuum equation of motion proposed for this problem by others on the basis of heuristic arguments. During recovery, the deposition flux and its associated shot noise are absent. We analyze this process with a completely deterministic equation of motion obtained by performing a statistical average of the original stochastic equation. Results using the latter compare favorably with full Monte Carlo simulations of the original model for the case of the decay of sinusoidally modulated initial surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 189
Copyright
Copyright © Materials Research Society 1992

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References

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